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Part No.	TPSI2140-Q1_V01
Manufacturer	TI
Size	1Mb
Pages	37 pages
Description	TPSI2140-Q1 1200-V, 50-mA, Automotive Isolated Switch with 2-mA Avalanche Rating

Datasheet Summary with AI

The TPSI2140-Q1 is an isolated solid-state relay for high-voltage automotive and industrial applications. It utilizes TI’s capacitive isolation technology with internal back-to-back MOSFETs, eliminating the need for a secondary-side power supply. The device requires only 9mA on the primary side and can be driven from a single microcontroller GPIO. The EN pin is fail-safe. The secondary side consists of back-to-back MOSFETs with a ±1.2kV standoff voltage. The device’s avalanche robustness and thermal design allow it to survive HiPot screening and DC fast charger surge currents (up to 2mA) without external components.

## Specifications (Key)
️· Absolute Maximum Voltage (VDD/VEN): 20.7V
️· Switch Current (IS1, S2): +/-50mA
️· Thermal Resistance (RθJA): 70°C/W (can be reduced with optimized layout)
️· Isolation Voltage: Up to 5300 VDC
️· ESD Rating (HBM): +/-2000V (Primary), +/-1000V (Secondary)

## Package
️· SOIC (DWQ-11): 10.3mm x 7.5mm

# TPSI2140-Q1 1200-V Automotive Isolated Switch

## Features
️· Qualified for automotive applications (AEC-Q100 Grade 1: -40 to 125°C)
️· Integrated avalanche rated MOSFETs (2mA for 5s, 1mA for 60s)
️· 1200V standoff voltage, 130Ω RON, <700µs TON/TOFF
️· Low primary side current: 9mA ON, 3.5µA OFF
️· Functional Safety Capable (ISO 26262/IEC 61508 documentation available)
️· Robust Isolation: >26yr lifetime @ 1000VRMS/1500VDC, up to 3750VRMS/5300VDC, ±100V/ns CMTI
️· SOIC (DWQ-11) package with wide pins for improved thermal capability (creepage/clearance ≥ 6-8mm)
️· Planned certifications: DIN VDE V 0884-11, UL 1577

## Applications
️· Solid state relays
️· Hybrid/electric powertrains
️· Battery Management Systems (BMS)
️· Solar energy
️· Onboard/EV chargers

## Description
The TPSI2140-Q1 is an isolated solid-state relay for high-voltage automotive and industrial applications. It utilizes TI’s capacitive isolation technology with internal back-to-back MOSFETs, eliminating the need for a secondary-side power supply. The device requires only 9mA on the primary side and can be driven from a single microcontroller GPIO. The EN pin is fail-safe. The secondary side consists of back-to-back MOSFETs with a ±1.2kV standoff voltage. The device’s avalanche robustness and thermal design allow it to survive HiPot screening and DC fast charger surge currents (up to 2mA) without external components.

## Specifications (Key)
️· Absolute Maximum Voltage (VDD/VEN): 20.7V
️· Switch Current (IS1, S2): +/-50mA
️· Thermal Resistance (RθJA): 70°C/W (can be reduced with optimized layout)
️· Isolation Voltage: Up to 5300 VDC
️· ESD Rating (HBM): +/-2000V (Primary), +/-1000V (Secondary)

## Package
️· SOIC (DWQ-11): 10.3mm x 7.5mm