1 Features
• Qualified for automotive applications
– AEC-Q100 grade 1: –40 to 125°C ambient
operating temperature
• Integrated avalanche rated MOSFETs
– Designed and qualified to operate in avalanche
mode during overvoltage conditions
• IAVA = 2-mA for 5-s pulses, 1-mA for 60-s
pulses
– 1200-V standoff voltage
– RON = 130-Ω (TJ = 25°C)
– TON, TOFF < 700-μs
• Low primary side supply current
– 9-mA ON state current
– 3.5-μA OFF state current
• Functional Safety Capable
– Documentation available to aid in ISO 26262
and IEC 61508 system design
• Robust isolation barrier:
– > 26 year projected lifetime at 1000-VRMS /
1500-VDC working voltage
– Isolation rating, VISO, up to 3750-VRMS / 5300-
VDC
– Peak surge, VIOSM, up to 5000-V
– ± 100-V/ns typical CMTI
• SOIC (DWQ-11) package with wide pins for
improved thermal capability
– Creepage and clearance ≥ 8-mm (primarysecondary)
– Creepage and clearance ≥ 6-mm (across
switch terminals)
• Safety-related certifications
– (Planned) DIN VDE V 0884-11:2017-01
– (Planned) UL 1577 component recognition
program

2 Applications
• Solid state relay
• Hybrid, electric, and power train systems
• Battery Management Systems (BMS)
• Solar energy
• Onboard charger
• Electric vehicle chargers (EV)

3 Description
The TPSI2140-Q1 is an isolated solid state
relay designed for high voltage automotive and
industrial applications. The TPSI2140-Q1 uses TI's
high reliability capacitive isolation technology in
combination with internal back-to-back MOSFETs to
form a completely integrated solution requiring no
secondary side power supply.
The entire primary side of the device requires only 9
mA of input current, enabling the user to drive both
the VDD and EN pins from a single microcontroller
GPIO and eliminating the need for an external low
side switch used in photo relay solutions. The user
can also choose to connect the VDD pin to a system
supply between 5 V–20 V and drive the EN pin
from a GPIO. The EN pin is fail-safe preventing any
possibility of back powering the VDD supply.
The secondary side consists of back-to-back
MOSFETs with a standoff voltage of ±1.2 kV from
S1 to S2. The TPSI2140-Q1 MOSFET's avalanche
robustness and thermally conscious package design
allow it to survive system level High Potential (HiPot)
screening and DC fast charger surge currents of up to
2 mA without requiring any external components.