1200 Datasheet(PDF) - FFSD08120A_V01

Producent	Numer części	Arkusz danych	Szczegółowy opis
ON Semiconductor	FFSD08120A	415Kb/6P	Silicon Carbide (SiC) Schottky Diode – EliteSiC, 8 A, 1200 V, D1, DPAK-3L January, 2023 - Rev. 4
	FFSD10120A	399Kb/6P	Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 1200 V, D1, DPAK-3L January, 2023 - Rev. 4
	NFVA22512NP2T	896Kb/16P	ASPM34 Series Automotive 3-Phase 1200 V 25 A IGBT Intelligent Power Module May, 2020 ??Rev. 0
	NVVR26A120M1WSS	506Kb/12P	Automotive 1200 V, 2.6 m N-Channel MOSFET, 400 A Half-Bridge Power Module February, 2023 - Rev. 4
	NVH4L040N120SC1	282Kb/8P	MOSFET - SiC Power, Single N-Channel, TO247-4L 1200 V, 40 m, 58 A April, 2020 ??Rev. 1
	FFSH15120A	367Kb/6P	Silicon Carbide (SiC) Schottky Diode – EliteSiC, 15 A, 1200 V, D1, TO-247-2L January, 2023 - Rev. 3
	NVBG020N120SC1	372Kb/7P	MOSFET - Power, Silicon Carbide, Single N-Channel D2PAK7L, 1200 V, 98 A, 20 mOhm June, 2020 ??Rev. 2
	NTH4L020N120SC1	283Kb/8P	MOSFET ??SiC Power, Single N-Channel, TO247-4L 1200 V, 20 m, 102 A April, 2020 ??Rev. 2
	NTH4L040N120SC1	282Kb/8P	MOSFET ??SiC Power, Single N-Channel, TO247-4L 1200 V, 40 m, 58 A April, 2020 ??Rev. 1
	NTH4L160N120SC1	277Kb/8P	MOSFET ??SiC Power, Single N-Channel, TO247-4L 1200 V, 160 m, 17.3 A April, 2020 ??Rev. 2
	NVH4L022N120M3S	339Kb/10P	MOSFET - SiC Power, Single N-Channel, TO247-4L 1200 V, 22 m, 68 A July, 2021-Rev. 0
	NVXK2TR40WXT	798Kb/7P	SiC Power MOSFET Module 1200 V, 40 m, 27 A H-Bridge Power Module July 2022 - Rev. 1
	NTH4L022N120M3S	261Kb/9P	MOSFET - SiC Power, Single N-Channel, TO247-4L 1200 V, 22 m, 68 A October, 2021 ??Rev. 1
	FFSH20120A	332Kb/6P	Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 1200 V, D1, TO-247-2L January, 2023 - Rev. 3
	NDSH30120CDN	302Kb/6P	Silicon Carbide (SiC) Schottky Diode – EliteSiC, 30 A, 1200 V, D3, TO-247-3L November, 2023 - Rev. 0
	NTBG040N120SC1	249Kb/8P	MOSFET ??SiC Power, Single N-Channel, D2PAK-7L 1200 V, 40 m, 60 A February, 2020 ??Rev. 0
	NVH4L160N120SC1	277Kb/8P	MOSFET - SiC Power, Single N-Channel, TO247-4L 1200 V, 160 m, 17.3 A April, 2020 ??Rev. 2
	NTBG080N120SC1	240Kb/8P	MOSFET ??SiC Power, Single N-Channel, D2PAK-7L 1200 V, 80 m, 30 A April, 2020 ??Rev. 1
	NDSH10120C-F155	292Kb/6P	Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 1200 V, D3, TO-247-2L November, 2023 - Rev. 0
	NDSH50120C-F155	211Kb/6P	Silicon Carbide (SiC) Schottky Diode – EliteSiC, 50 A, 1200 V, D3, TO-247-2L November, 2023 - Rev. 0

1200 Arkusz danych, PDF

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