1200 Datasheet(PDF) - STGW25S120DF3

Producent	Numer części	Arkusz danych	Szczegółowy opis
STMicroelectronics	STGW25S120DF3	703Kb/18P	Trench gate field-stop IGBT, S series 1200 V, 25 A low drop December 2014 Rev 2
	STGW25H120F2	957Kb/17P	Trench gate field-stop IGBT, H series 1200 V, 25 A high speed March 2015 Rev 4
	STGW40S120DF3	724Kb/18P	Trench gate field-stop IGBT, S series 1200 V, 40 A low drop December 2014 Rev 2
	STGW15M120DF3	1Mb/19P	Trench gate field-stop IGBT, M series 1200 V, 15 A low loss October 2014 Rev 2
	STGW25M120DF3	1Mb/18P	Trench gate field-stop IGBT, M series 1200 V, 25 A low loss October 2014 Rev 2
	STE70IE120	144Kb/7P	Monolithic Emitter Switched Bipolar Transistor ESBT짰 1200 V - 70 A - 0.014 廓 Power Module
	STEVAL-IPM10B	1Mb/9P	1200 W motor control power board based on STGIB10CH60TS-L SLLIMM??2nd series IPM Rev 4 - September 2019
	LPS33K	1Mb/31P	MEMS pressure sensor: 300-1200 hPa absolute digital output barometer with potted gel package May 2020 - Rev 3
	STG25H120F2D7	252Kb/10P	1200 V, 25 A trench gate field-stop H series IGBT die in D7 packing May 2015 Rev 1
	STGIK10M120T	718Kb/21P	SLLIMM high power IPM, 3-phase inverter, 10 A, 1200 V short‑circuit rugged IGBT Rev 2 - September 2022
	SCTW40N120G2V	205Kb/12P	Silicon carbide Power MOSFET 1200 V, 62 m廓 typ., 36 A in an HiP247 package Rev 2 - June 2021
	A2U12M12W2-F1C	478Kb/14P	ACEPACK 2 power module, 3-level topology, 1200 V, 100 A based on SiC Power MOSFET September 2021 Rev 1
	SCTH70N120G2V-7	378Kb/14P	Silicon carbide Power MOSFET 1200 V, 21 m廓 typ., 90 A in an H짼PAK?? package Rev 2 - May 2021
	STG35M120F3D7	184Kb/9P	1200 V, 35 A, trench gate field-stop, M series, low-loss IGBT die in D7 packing DS12463 - Rev 1 - February 2018
	STG15M120F3D7	263Kb/10P	Trench gate field-stop 1200 V, 15 A low-loss M series IGBT die in D7 packing Rev 3 - August 2022
	STG15M120F3D8	224Kb/8P	1200 V, 15 A trench gate field‑stop M series low‑loss IGBT die in D8 packing Rev 1 - January 2022
	STG50M120F3D7	243Kb/10P	Trench gate field-stop 1200 V, 50 A low-loss M series IGBT die in D7 packing Rev 2 - August 2022
	ADP480120W3-L	2Mb/15P	Automotive-grade ACEPACK DRIVE power module, sixpack topology 1200 V, 1.9 m typ. SiC MOSFET gen.3 based August 2022 Rev 2
	STFW8N120K5	302Kb/12P	N-channel 1200 V, 1.65 Ω typ., 6 A, MDmesh K5 Power MOSFET in a TO-3PF package DS12562 - Rev 2 - July 2018
	A2F12M12W2-F1	565Kb/15P	ACEPACK 2 power module, fourpack topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC February 2022 Rev 3

1200 Arkusz danych, PDF

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