Description
Silicon Carbide (SiC) MOSFET uses a completely new technology
that provide superior switching performance and higher reliability
compared to Silicon. In addition, the low ON resistance and compact
chip size ensure low capacitance and gate charge. Consequently,
system benefits include highest efficiency, faster operation frequency,
increased power density, reduced EMI, and reduced system size.

Features
• 1200 V @ TJ = 175°C
• Typ RDS(on) = 40 m at VGS = 20 V, ID = 40 A
• High Speed Switching with Low Capacitance
• 100% UIL Tested
• Qualified According to AEC−Q101 Conditions
• These Devices are Pb−Free and are RoHS Compliant

Applications
• Automotive Traction Inverter
• Automotive DC/DC Converter for EV/HEV