VRF151 Arkusz danych(PDF) - Advanced Power Technology

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VRF151 Arkusz danych (PDF) - Advanced Power Technology

VRF151 Datasheet PDF - Advanced Power Technology


Numer części	VRF151

Pobierz	VRF151 Pobierz

Rozmiar pliku	210.59 Kbytes

Page	5 Pages

Producent	ADPOW [Advanced Power Technology]

Strona internetowa	http://www.advpowertech.com

Logo

Szczegółowy opis

N-CHANNEL RF POWER VERTICAL MOSFET

VRF151 Datasheet (PDF)

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Pobierz Arkusz danych

VRF151 Datasheet PDF - Advanced Power Technology


Numer części	VRF151

Pobierz	VRF151 Click to download

Rozmiar pliku	210.59 Kbytes

Page	5 Pages

Producent	ADPOW [Advanced Power Technology]

Strona internetowa	http://www.advpowertech.com

Logo

Szczegółowy opis	N-CHANNEL RF POWER VERTICAL MOSFET

VRF151 Arkusz danych (HTML) - Advanced Power Technology

VRF151 Datasheet HTML 1Page - Advanced Power Technology

VRF151 Datasheet HTML 2Page - Advanced Power Technology

VRF151 Datasheet HTML 3Page - Advanced Power Technology

VRF151 Datasheet HTML 4Page - Advanced Power Technology

VRF151 Datasheet HTML 5Page - Advanced Power Technology

VRF151 Szczegóły Produktu

BROADBAND HF/VHF VERTICAL D-MOS ISM & MILITARY/COMMERCIAL COMMUNICATIONS APPLICATIONS

DESCRIPTION:

The VRF151 is a gold metallized silicon, n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising

reliability, ruggedness, and intermodulation distortion.

Features

· 150W WITH 14dB TYPICAL GAIN @ 175MHz, 50V

· 150W WITH 22dB TYPICAL GAIN @ 30MHz, 50V

· EXCELLENT STABILITY & LOW IMD

· COMMON SOURCE CONFIGURATION

· 30:1 LOAD VSWR CAPABILITY AT SPECIFIED OPERATING CONDITIONS

· NITRIDE PASSIVATED

· REFRACTORY GOLDMETALLIZATION

Podobny numer części - VRF151

Producent	Numer części	Arkusz danych	Szczegółowy opis
Microsemi Corporation	VRF151	129Kb / 4P	RF POWER VERTICAL MOSFET
	VRF151E	129Kb / 4P	RF POWER VERTICAL MOSFET
	VRF151E	139Kb / 5P	RF POWER VERTICAL MOSFET
	VRF151EMP	139Kb / 5P	RF POWER VERTICAL MOSFET
	VRF151E	139Kb / 5P	RF POWER VERTICAL MOSFET

Podobny opis - VRF151

Producent	Numer części	Arkusz danych	Szczegółowy opis
Motorola, Inc	MRF141	160Kb / 8P	N-CHANNEL BROADBAND RF POWER MOSFET
	MRF141G	143Kb / 6P	N-CHANNEL BROADBAND RF POWER MOSFET
	MRF151	184Kb / 8P	N-CHANNEL BROADBAND RF POWER MOSFET
	MRF151G	156Kb / 6P	N-CHANNEL BROADBAND RF POWER MOSFET
	MRF154	161Kb / 8P	N-CHANNEL BROADBAND RF POWER MOSFET
	MRF177	186Kb / 6P	N-CHANNEL BROADBAND RF POWER MOSFET
Tyco Electronics	MRF141	205Kb / 10P	N-CHANNEL BROADBAND RF POWER MOSFET
	MRF151G	250Kb / 9P	N-CHANNEL BROADBAND RF POWER MOSFET
	MRF173	147Kb / 8P	N-CHANNEL BROADBAND RF POWER MOSFET
Advanced Power Technolo...	VRF150	209Kb / 5P	N-CHANNEL RF POWER VERTICAL MOSFET

O Advanced Power Technology

Advanced Power Technology (APT) is a semiconductor company that designs, manufactures and sells power MOSFETs and IGBTs (Insulated Gate Bipolar Transistors). The company was founded in 1986 and is headquartered in Bend, Oregon, USA.

APT's products are used in a wide range of applications, including automotive, industrial, communications, and consumer electronics. The company offers a wide range of MOSFETs and IGBTs with different voltage and current ratings, package options and other features to meet the specific needs of its customers.

APT is known for its commitment to quality and innovation. The company's products are designed to meet the highest standards of performance and reliability, and are manufactured using the latest technology and materials. APT also offers custom design and engineering services to meet the specific needs of its customers.

APT has a global presence, with sales offices and representatives located around the world. The company is dedicated to delivering innovative and reliable power MOSFETs and IGBTs that meet the evolving needs of the electronics industry. In 2000, APT was acquired by Microsemi Corporation, which later became part of Microchip Technology Inc.

*Niniejsze informacje służą wyłącznie celom informacyjnym, nie ponosimy odpowiedzialności za jakiekolwiek straty lub szkody spowodowane przez powyższe informacje.

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