1 Features
• Dual output split driver with on-the-fly
programmable drive strength
– ±15-A and ±5-A drive current outputs
– Digital input pins (GD*) for drive strength
adjustment without SPI
– 3 resistor settings R1, R2, or R1||R2
– Integrated 4-A active Miller clamp or optional
external drive for Miller clamp transistor
• Primary and secondary side active short circuit
(ASC) support
• Internal and external supply under-voltage and
over-voltage protection
• Driver die temperature sensing and over
temperature protection
• Short-circuit protection:
– 75-ns response time to over-current event
– DESAT protection – selections up to 14 V
– Shunt resistor based over-current protection
– Configurable protection threshold values and
blanking times
– Programmable soft turnoff (STO) and two-level
soft turnoff (2STO) current
• Integrated 10-bit ADC
– Power switch temperature, driver die
temperature, DESAT pin voltage, VCC2
voltage, phase current, DC Link voltage
– Programmable digital comparators
• Advanced VCE/VDS clamping circuit
• Functional Safety-Compliant
– Developed for functional safety applications
– Documentation available to aid ISO 26262
system design up to ASIL D
• Integrated diagnostics:
– Built in self-test (BIST) for protection
comparators
– Gate threshold voltage measurement for power
device health monitoring
– INP to transistor gate path integrity
– Internal clock monitoring
– Fault alarm and warning outputs (nFLT*)
– ISO communication data integrity check
• SPI based device reconfiguration, verification,
supervision, and diagnosis
• 100 kV/μs CMTI
• Safety-related certifications:
– 5-kVRMS isolation for 1 minute per UL1577
(planned)
– Reinforced isolation 7070-VPK per DIN VDE
0884-11: 2017-01 (planned)
• AEC-Q100 qualified with the following results:
• – Device temperature grade 1: -40°C to +125°C
ambient operating temperature
– Device HBM ESD classification level 2
– Device CDM ESD classification level C4B

2 Applications
• EV and HEV traction inverter
• EV and HEV power modules

3 Description
The UCC5880-Q1 device is an isolated, highly
configurable adjustable slew-rate gate driver targeted
to drive high power SiC MOSFETs and IGBTs in
EV/HEV applications. Power transistor protections
such as shunt resistor based over-current, overtemperature
(PTC, NTC, or diode), and DESAT
detection, including selectable soft turn-off or twolevel
soft turn-off during these faults. To further reduce
the application size, the UCC5880-Q1 integrates an
active Miller clamp, and an active gate pull-down
while the driver is unpowered. An integrated 10-bit
ADC enables monitoring of up to 2 analog inputs,
VCC2, DESAT, and the gate driver temperature
for enhanced system management. Diagnostics and
detection functions are integrated to simplify the
design of ASIL compliant systems. The parameters
and thresholds for these features are configurable
using the SPI, which allows the device to be used with
nearly any SiC MOSFET or IGBT.