GENERAL DESCRIPTION
The 1214GN-400LV is an internally matched, COMMON SOURCE,
class AB GaN on SiC HEMT transistor capable of providing over 16dB
gain, 400 Watts of pulsed RF output power at 4.5ms pulse width, 30%
duty factor across the 1200 to 1400 MHz band. The transistor has
internal pre-match for optimal performance. This hermetically sealed
transistor is designed for L-Band Radar applications. It utilizes gold
metallization and eutectic attach to provide highest reliability and
superior ruggedness.