GENERAL DESCRIPTION
The 1214GN-650V is an internally matched, COMMON SOURCE, class AB GaN
on SiC HEMT transistor capable of providing over 17dB gain, 650 Watts of
pulsed RF output power at 150μs pulse width, 10% duty cycle across the 1200 to
1400 MHz band. The transistor has internal pre-match for optimal performance.
This hermetically sealed transistor can be used for Broadband Avionics Data
Link applications. It utilizes gold metallization and eutectic attach to provide
highest reliability and superior ruggedness.