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General Description This Power MOSFET is produced using Winsemis advanced planar stripe,VDMOS technology.this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially well suited for half bridge and full bridge resonant topology line a electronic lamp ballast, high efficiency switched mode power supplies, active power factor correction. Features ■ 4.0A,600V,RDS(on)(Max2.3Ω)@VGS=10V ■ Ultra-low Gate charge(Typical15nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃ )
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