2SC5761 pdf, 2SC5761 Szczegółowy opis, 2SC5761 Arkusz danych, 2SC5761 view ::: ALLDATASHEET :::

Numer części	2SC5761

Szczegółowy opis	NPN SiGe RF TRANSISTOR FOR LOW NOISE ⋅ HIGH-GAIN AMPLIFICATION

Rozmiar pliku	305.1 Kbytes

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Producent	RENESAS [Renesas Technology Corp]

Strona internetowa	http://www.renesas.com

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Podobny numer części - 2SC5761

Producent	Numer części	Arkusz danych	Szczegółowy opis
NEC	2SC5761	81Kb / 14P	NPN SiGe RF TRANSISTOR FOR LOW NOISE & HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)
NEC	2SC5761-T2	81Kb / 14P	NPN SiGe RF TRANSISTOR FOR LOW NOISE & HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)

Producent	Numer części	Arkusz danych	Szczegółowy opis
NEC	NESG2046M33	118Kb / 3P	NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION
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	NESG3033M14	176Kb / 16P	NPN SiGe RF Transistor for Low Noise, High-Gain
	NESG210719	124Kb / 10P	NPN SiGe RF Transistor for Low Noise, High-Gain