LTC4236 datasheet(3/24 Pages) LINER

3 / 24 page

LTC4236

4236f

For more information www.linear.com/LTC4236

elecTrical characTerisTics

Note 1: Stresses beyond those listed under Absolute Maximum Ratings

may cause permanent damage to the device. Exposure to any Absolute

Maximum Rating condition for extended periods may affect device

reliability and lifetime.

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNITS

Supplies

VIN

Input Supply Range

2.9

IIN

Input Supply Current

2.7

VINTVCC

Internal Regulator Voltage

I = 0, –500µA

4.5

5.5

VINTVCC(UVL)

Internal VCC Undervoltage Lockout

INTVCC Rising

2.1

2.2

2.3

∆VINTVCC(HYST) Internal VCC Undervoltage Lockout Hysteresis

Ideal Diode Control

∆VFWD(REG)

Forward Regulation Voltage

(VINn – VSENSE+)

∆VDGATE

External N-Channel Gate Drive

(VDGATE1 – VIN1) and (VDGATE2 – VD2SRC)

IN < 7V, ∆VFWD = 0.15V; I = 0, –1µA

IN = 7V to 18V, ∆VFWD = 0.15V; I = 0, –1µA

∆VDGATE(ST)

Diode MOSFET On Detect Threshold

(VDGATE1 – VIN1) and (VDGATE2 – VD2SRC)

DSTAT Pulls Low, ∆VFWD = 50mV

0.3

0.7

1.1

ID2SRC

D2SRC Pin Current

D2SRC = 0V

–90

–130

µA

ICPO(UP)

CPOn Pull-Up Current

CPO = IN = D2SRC = 2.9V

CPO = IN = D2SRC = 18V

–60

–50

–100

–90

–130

–120

µA

IDGATE(FPU)

DGATEn Fast Pull-Up Current

∆VFWD = 0.2V, ∆VDGATE = 0V, CPO = 17V

–1.5

IDGATE(FPD)

DGATEn Fast Pull-Down Current

∆VFWD = –0.2V, ∆VDGATE = 5V

1.5

IDGATE2(DN)

DGATE2 Off Pull-Down Current

D2OFF = 2V, ∆VDGATE2 = 2.5V

100

200

µA

tON(DGATE)

DGATEn Turn-On Delay

∆VFWD = 0.2V , CDGATE = 10nF

0.25

0.5

µs

tOFF(DGATE)

DGATEn Turn-Off Delay

∆VFWD = –0.2V, CDGATE = 10nF

0.2

0.5

µs

tPLH(DGATE2)

D2OFF Low to DGATE2 High

100

µs

Hot Swap Control

∆VSENSE(TH)

Current Limit Sense Voltage Threshold

(VSENSE+ – VSENSE–)

FB = 1.3V

FB = 0V

22.5

5.8

8.3

27.5

10.8

VSENSE+(UVL)

SENSE+ Undervoltage Lockout

SENSE+ Rising

1.8

1.9

∆VSENSE+(HYST) SENSE+ Undervoltage Lockout Hysteresis

ISENSE+

SENSE+ Pin Current

SENSE+ = 12V

0.3

0.8

1.3

ISENSE–

SENSE– Pin Current

SENSE– = 12V

100

µA

ICS+

CS+ Pin Current

CS+ = 12V, ∆VSENSE = 0V

±1

µA

∆VHGATE

External N-Channel Gate Drive

(VHGATE – VOUT)

IN < 7V, I = 0, –1µA

IN = 7V to 18V, I = 0, –1µA

∆VHGATE(H)

Gate High Threshold (VHGATE – VOUT)

3.6

4.2

4.8

IHGATE(UP)

External N-Channel Gate Pull-Up Current

Gate Drive On, HGATE = 0V

–7

–10

–13

µA

IHGATE(DN)

External N-Channel Gate Pull-Down Current Gate Drive Off, OUT = 12V,

HGATE = OUT + 5V

IHGATE(FPD)

External N-Channel Gate Fast Pull-Down

Current

Fast Turn-Off, OUT = 12V,

HGATE = OUT + 5V

100

200

350

tPHL(SENSE)

Sense Voltage (SENSE+ – SENSE–)

High to HGATE Low

∆VSENSE = 200mV, CHGATE = 10nF

0.5

µs

tOFF(HGATE)

ON Low to HGATE Low

EN High to HGATE Low

SENSE+ Low to HGATE Low

SENSE+ UVLO

µs

tD(HGATE)

ON High, EN Low to HGATE Turn-On Delay DTMR = INTVCC

100

150

tP(HGATE)

ON to HGATE Propagation Delay

ON = Step 0.8V to 2V

µs

The l denotes the specifications which apply over the full operating

temperature range, otherwise specifications are at TA = 25°C. VIN = 12V, unless otherwise noted.

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