IXRFD630 datasheet(1/8 Pages) IXYS

Numer części	IXRFD630

Szczegółowy opis	30 A Low-Side RF MOSFET Driver

PDF	8 Pages

Scroll/Zoom	100%

Producent	IXYS [IXYS Corporation]

Strona internetowa	http://www.ixys.com

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30 A Low-Side RF MOSFET Driver

IXRFD630

1

Features

•High Peak Output Current

•Low Output Impedance

•Low Quiescent Supply Current

•Low Propagation Delay

•High Capacitive Load Drive Capability

•Wide Operating Voltage Range

Applications

•RF MOSFET Driver

•Class D and E RF Generators

•Multi-MHz Switch Mode Supplies

•Pulse Transformer Driver

•Pulse Laser Diode Driver

•Pulse Generator

Description

The IXRFD630 is a CMOS high-

speed, high-current gate driver

specifically designed to drive

MOSFETs in Class D and E HF

RF applications as well as other

applications requiring ultrafast

rise and fall times or short mini-

mum pulse widths. The IXRFD630 can source and

sink 30 A of peak current while producing voltage rise

and fall times of less than 4 ns and minimum pulse

widths of 8 ns. The input of the driver is compatible

with TTL or CMOS and is fully immune to latch up over

the entire operating range. Designed with small inter-

nal delays, cross conduction or current shoot-through

is virtually eliminated. The features and wide safety

margin in operating voltage and power make the

IXRFD630 unmatched in performance and value.

The surface mount IXRFD630 is packaged in a low-

inductance RF package incorporating advanced layout

techniques to minimize stray lead inductances for opti-

mum switching performance.

Fig. 1- Block Diagram and Truth Table

IN

OUT

0

1

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