30 A Low-Side RF MOSFET Driver

IXRFD630

2

Absolute Maximum Ratings

Electrical Characteristics

All voltage measurements with respect to GND. IXRFD630 configured as described in Test Conditions.

Symbol

Parameter

Test Conditions

Typ

Max

Units

High input voltage

3

V

Low input voltage

2.8

0.8

V

Input hysteresis

0.23

V

Input voltage range

V

Input current

10

A

High output voltage

V

Low output voltage

0.025

V

High output resistance

0.25

Low output resistance

0.17

Peak output current

28

A

Continuous output current

2.5

A

Rise time

4

5

ns

ns

Fall time

4

5.5

ns

ns

ON propagation delay

24

ns

OFF propagation delay

22

ns

Minimum pulse width

8

ns

Power supply voltage

Recommended

8

15

18

V

Power supply current

0

1

0

1

3

5

mA

mA

mA

3.5

-5

-10

Min

Parameter

Value

30V

All Other Pins

Power Dissipation

2W

100W

Storage Temperature

-40°C to 150°C

Soldering Lead Temperature

(10 seconds maximum)

300°C

Note: Operating the device outside of the “Absolute Maximum Rat-

ings” may cause permanent damage. Typical values indicate condi-

tions for which the device is intended to be functional but do not

guarantee specific performance limits. The guaranteed specifica-

tions apply only for the test conditions listed. Exposure to absolute

maximum conditions for extended periods may impact device reli-

ability.

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD procedures when handling and

assembling.

Parameter

Value

Maximum Junction Temperature

150° C

Operating Temperature Range

-40° C to 85° C