P2206BTF datasheet(1/4 Pages) NIKOSEM

Numer części	P2206BTF

Szczegółowy opis	N-Channel Enhancement Mode Field Effect Transistor

PDF	4 Pages

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Producent	NIKOSEM [NIKO SEMICONDUCTOR CO., LTD.]

Strona internetowa	http://www.niko-sem.com

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REV 1.0

1

F-06-5

N-Channel Enhancement Mode

Field Effect Transistor

P2206BTF

TO-220F

Halogen-Free & Lead-Free

NIKO-SEM

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

LIMITS

UNITS

Drain-Source Voltage

VDS

60

V

Gate-Source Voltage

VGS

±20

V

Continuous Drain Current

TC = 25 °C

ID

28

A

TC = 100 °C

18

Pulsed Drain Current

1

IDM

100

Avalanche Current

IAS

25

Avalanche Energy

L = 0.1mH

EAS

31

mJ

Power Dissipation

TC = 25 °C

PD

39

W

TC = 100 °C

15

Junction & Storage Temperature Range

TJ, Tstg

-55 to 150

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

TYPICAL

MAXIMUM

UNITS

Junction-to-Case

RJC

3.2

°C / W

Junction-to-Ambient

RJA

62.5

1Pulse width limited by maximum junction temperature.

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

PARAMETER

SYMBOL

TEST CONDITIONS

LIMITS

UNIT

MIN TYP MAX

STATIC

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0V, ID = 250A

60

V

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250A

1.3

1.75

2.3

Gate-Body Leakage

IGSS

VDS = 0V, VGS = ±20V

±100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 48V , VGS = 0V

1

A

VDS = 40V, VGS = 0V, TJ = 125 °C

10

Drain-Source On-State

Resistance

1

RDS(ON)

VGS = 4.5V, ID = 12A

21

30

mΩ

VGS = 10V , ID = 20A

18

22.5

Forward Transconductance

1

gfs

VDS = 5V, ID = 20A

47

S

1. GATE

2. DRAIN

3. SOURCE

PRODUCT SUMMARY

V(BR)DSS

RDS(ON)

ID

60V

22.5mΩ

28A

G

D

S

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