STM32WB55CC datasheet(98/165 Pages) STMICROELECTRONICS

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IDD

(SRAM2a)

(3)

Supply

current to be

subtracted in

Standby

mode when

SRAM2a is

not retained

1.8 V 0.160 0.210 0.380 0.660 2.30

5.15

10.9

TBD

µA

2.4 V 0.165 0.245 0.375 0.650 2.15

5.20

11.0

TBD

3.0 V 0.155 0.250 0.385 0.630 2.25

5.20

11.0

TBD

3.6 V 0.155 0.235 0.375 0.670 2.20

5.20

11.0

TBD

IDD

(wakeup

from

Standby)

Supply current

during

wakeup from

Standby mode

Wakeup clock is

HSI16. See (4).

SMPS ON

3.0 V

TBD

Wakeup clock is

HSI16. See (4).

SMPS OFF

3.0 V

TBD

1. Guaranteed by characterization results, unless otherwise specified.

2. Based on characterization done with a 32.768 kHz crystal (MC306-G-06Q-32.768, manufacturer JFVNY) with two 6.8 pF loading capacitors.

3. The supply current in Standby with SRAM2a mode is: IDD(Standby) + IDD(SRAM2a). The supply current in Standby with RTC with SRAM2a mode is:

IDD(Standby + RTC) + IDD(SRAM2a).

4. Wakeup with code execution from Flash memory. Average value given for a typical wakeup time as specified in Table 49: Low-power mode wakeup timings.

Table 44. Current consumption in Standby mode (continued)

Symbol

Parameter

Conditions

TYP

MAX(1)

Unit

-VDD 0 °C 25 °C 40 °C 55 °C 85 °C 105 °C 125 °C 0 °C 25 °C 40 °C 55 °C 85 °C 105 °C 125 °C

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