FJB102 datasheet(1/5 Pages) FAIRCHILD

Numer części	FJB102

Szczegółowy opis	High Voltage Power Darlington Transistor

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Producent	FAIRCHILD [Fairchild Semiconductor]

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FJB102 Rev. A

FJB102

High Voltage Power Darlington Transistor

Features

• High DC Current Gain : hFE=1000 @ VCE=4V, IC=3A (Min.)

• Low Collector-Emitter Saturation Voltage

• High Collector-Emitter Sustaining Voltage

• Monolithic Construction with Built-in Base-Emitter Shunt Resistors

• Industrial Use

Absolute Maximum Ratings

* Pulse Test: PW = 300

µs, Duty Cycle = 2% Pulsed

Package Marking and Ordering Information

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

100

V

VCEO

Collector-Emitter Voltage

100

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current (DC)

8

A

ICP

* Collector Current (Pulse)

15

A

IB

Base Current (DC)

1

A

PC

Collector Dissipation (TC = 25°C)

80

W

TJ

Junction Temperature

150

°C

TSTG

Storage Temperature

-65 ~ 150

°C

Device Marking

Device

Package

Reel Size

Tape Width

Quantity

FJB102

D2-PAK

13” Dia

-

800

D2-PAK

1.Base 2.Collector 3.Emitter

1

R1

10k

Ω

≅

R2

0.6k

Ω

≅

Equivalent Circuit

B

E

C

R1

R2

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