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Zakładka z wyszukiwarką danych komponentów |
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B7NE65 Arkusz danych(PDF) 1 Page - Jiangsu Donghai Semiconductor Technology Co.,Ltd |
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B7NE65 Arkusz danych(HTML) 1 Page - Jiangsu Donghai Semiconductor Technology Co.,Ltd |
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1 / 11 page  ROUM Semiconductor Technology CO.,LTD. Rev. 1.0 www.roum.cn Page 1 of 11 B7NE65 1 Description These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard. 2 Features ● Fast Switching ● ESD Improved Capability ● Low ON Resistance(Rdson≤1.4Ω) ● Low Gate Charge(Typical Data:24nC) ● Low Reverse Transfer Capacitances(Typical:5.5pF) ● 100% Single Pulse Avalanche Energy Test ● 100% Δ VDS Test 3 Applications ● used in various power switching circuit for system miniaturization and higher efficiency. ● Power switch circuit of electron ballast and adaptor. 7A 650V N-channel Enhancement Mode Power MOSFET 4 Electrical Characteristics 4.1 Absolute Maximum Rating(Tc=25℃,unless otherwise noted) PARAMETER SYMBOL VALUE UNIT Maximum Drian-Source DC Voltage VDS 650 V Maximum Gate-Drain Voltage VGS ±30 V Drain Current(continuous) ID（T=25℃） （T=100℃） 7 A 4.4 A Drain Current(Pulsed) (Note 1) IDM 28 A Single Pulse Avalanche Energy (Note 5) EAS 350 mJ Peak Diode Recovery dv/dt (Note 6) dv/dt 5 V/ns Total Dissipation Ta=25℃ Ptot 2 W TC=25℃ Ptot 100 W Junction Temperature Tj 150 ℃ storage Temperature Tstg -55～150 ℃ Maximum Temperature for soldering TL 300 ℃ 4.2 Thermal Characteristics PARAMETER SYMBOL VALUE UNIT Thermal Resistance Junction to Case-sink RthJC 1.25 ℃/W Thermal Resistance Junction to Ambient RthJA 62.5 ℃/W VDSS = 650V RDS(on) （TYP)= 1.2Ω ID = 7A TO-251 |
Podobny numer części - B7NE65 |
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Podobny opis - B7NE65 |
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