I7N60 datasheet(1/11 Pages) WXDH

Numer części	I7N60

Szczegółowy opis	7A 600V N-channel Enhancement Mode Power MOSFET

PDF	11 Pages

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Producent	WXDH [Jiangsu Donghai Semiconductor Technology Co.,Ltd]

Strona internetowa	http://www.jswxdh.cn

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ROUM Semiconductor Technology CO.,LTD.

Rev. 1.0

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I7N60

7A 600V N-channel Enhancement Mode Power MOSFET

4

Electrical Characteristics

4.1 Absolute Maximum Rating

(Tc=25℃,unless otherwise noted)

Parameter

Symbol

Value

Units

Maximum Drian-Source DC Voltage

VDS

600

V

Maximum Gate-Drain Voltage

VGS

±30

V

Drain Current(continuous)

ID（T=25℃）

（T=100℃）

7

A

4.4

A

Drain Current(Pulsed)

(Note 3)

IDM

28

A

Single Pulse Avalanche Energy

(Note 1)

EAS

400

mJ

Peak Diode Recovery dv/dt

(Note 2)

dv/dt

5

V/ns

Total Dissipation

Ta=25℃

Ptot

2

W

TC=25℃

Ptot

100

W

Junction Temperature

Tj

150

℃

Storage Temperature

Tstg

-55～150

℃

Maximum Temperature for Soldering

TL

300

℃

1

Description

These silicon N-channel Enhanced VDMOSFETs, is obtained by

the self-aligned planar technology which reduce the conduction

loss, improve switching performance and enhance the avalanche

energy. Which accords with the RoHS standard.

2

Features

● Fast Switching

● Low ON Resistance(Rdson≤1.3Ω)

● Low Gate Charge(Typical Data:24nC)

● Low Reverse Transfer Capacitances(Typical:5.5pF)

● 100% Single Pulse Avalanche Energy Test

● 100% ΔV

DS Test

3

Applications

● Used in Various Power Switching Circuit for System

Miniaturization and Higher Efficiency.

● Power Switch Circuit of Adaptor and Charger.

VDSS = 600V

RDS(on)（TYP)= 1.0Ω

ID = 7A

TO-262

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Podobny numer części - I7N60

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