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I7N60 Arkusz danych(PDF) 3 Page - Jiangsu Donghai Semiconductor Technology Co.,Ltd

Numer części I7N60
Szczegółowy opis  7A 600V N-channel Enhancement Mode Power MOSFET
PDF  11 Pages
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Producent  WXDH [Jiangsu Donghai Semiconductor Technology Co.,Ltd]
Strona internetowa  http://www.jswxdh.cn
Logo WXDH - Jiangsu Donghai Semiconductor Technology Co.,Ltd

I7N60 Arkusz danych(HTML) 3 Page - Jiangsu Donghai Semiconductor Technology Co.,Ltd

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ROUM Semiconductor Technology CO.,LTD.
Rev. 1.0
www.roum.cn
Page 3 of 11
I7N60
Reverse Recovery Time
trr
TJ=25℃,IS=7A,
dIF/dt=100A/μS,VGS=0V
--
363
--
nS
Reverse Recovery
Charge
Qrr
--
1920
--
nC
Reverse Recovery
Current
IRRM
--
10.6
--
A
Notes：
1. L=10mH,ID=9A, Start TJ=25℃.
2. ISD=7A,di/dt≤100A/μs,VDD≤BVDSS, Start TJ=25℃.
3: Repetitive rating, pulse width limited by maximum junction temperature.
4: Surface mounted on FR4 Board, t≤10sec.
5: Pulse width ≤ 300μs, duty cycle ≤ 2%.
6: Guaranteed by design, not subject to production.



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