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NFAM2012L5B Arkusz danych(PDF) 5 Page - ON Semiconductor |
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NFAM2012L5B Arkusz danych(HTML) 5 Page - ON Semiconductor |
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5 / 9 page ![]() NFAM2012L5B www.onsemi.com 5 Table 2. ABSOLUTE MAXIMUM RATINGS TC = 25°C (Notes 1) Rating Symbol Conditions Value Unit Supply Voltage VPN P − NU, NV, NW 900 V Supply Voltage (Surge) VPN(Surge) P − NU, NV, NW, (Note 2) 1000 V Self Protection Supply Voltage Limit (Short−Circuit Protection Capability VPN(PROT) VDD = VBS = 13.5 V ~ 16.5 V, Tj = 150°C, Vces < 1200 V, Non−Repetitive, < 2 us 800 V Collector−Emitter Voltage Vces 1200 V Maximum Repetitive Revers Voltage VRRM 1200 V Each IGBT Collector Current ±Ic ±20 A Each IGBT Collector Current (Peak) ±Icp Under 1 ms Pulse Width ±40 A Control Supply Voltage High−Side Control Bias Voltage VDD VDD(UH, VH, WH), VDD(L) − VSS −0.3 to 20 V VBS VB(U) − VS(U), VB(V) − VS(V), VB(W) − VS(W) −0.3 to 20 V Input Signal Voltage VIN HIN(U), HIN(V), HIN(W), LIN(U), LIN(V), LIN(W) − VSS −0.3 to VDD V Fault Output Supply Voltage VFO VFO − VSS −0.3 to VDD V Fault Output Current IFO Sink Current at VFO pin 2 mA Current Sensing Input Voltage VCIN CIN − VSS −0.3 to VDD V Corrector Dissipation Pc Per One Chip 125 W Operating Junction Temperature Ti −40 to +150 °C Storage Temperature Tstg −40 to +125 °C Module Case Operation Temperature Tc −40 to +125 °C Isolation Voltage Viso 60 Hz, Sinusoidal, AC 1 minute, Connec- tion Pins to Heat Sink Plate 2500 V rms Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe Operating parameters. 2. This surge voltage developed by the switching operation due to the wiring inductance between P and NU, NV, NW terminal. Table 3. THERMAL CHARACTERISTICS Rating Symbol Conditions Min Typ Max Unit Junction to Case Thermal Resistance Rth(j−c)Q Inverter IGBT Part (per 1/6 Module) − − 1.0 °C/W Rth(j−c)F Inverter FRD Part (per 1/6 Module) − − 1.2 °C/W 3. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe Operating parameters. Table 4. RECOMMENDED OPERATING RANGES (Note 4) (continued) Rating Symbol Conditions Min Typ Max Unit Supply Voltage VPN P − NU, NV, NW − 600 800 V Gate Driver Supply Voltages VDD VDD(UH, VH, WH), VDD(L) − VSS 13.5 15 16.5 V VBS VB(U) − VS(U), VB(V) − VS(V), VB(W) − VS(W) 13.0 15 18.5 V Supply Voltage Variation dVDD / dt dVBS / dt −1 − 1 V/ms PWM Frequency fPWM 1 20 kHz Dead Time DT Turn−off to Turn−on (external) 3 − − ms |
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