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NFAM2012L5B Arkusz danych(PDF) 5 Page - ON Semiconductor

Numer części NFAM2012L5B
Szczegółowy opis  Intelligent Power Module (IPM) 1200 V, 20 A
PDF  9 Pages
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NFAM2012L5B Arkusz danych(HTML) 5 Page - ON Semiconductor

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Table 2. ABSOLUTE MAXIMUM RATINGS TC = 25°C (Notes 1)
Rating
Symbol
Conditions
Value
Unit
Supply Voltage
VPN
P − NU, NV, NW
900
V
Supply Voltage (Surge)
VPN(Surge)
P − NU, NV, NW, (Note 2)
1000
V
Self Protection Supply Voltage Limit
(Short−Circuit Protection Capability
VPN(PROT)
VDD = VBS = 13.5 V ~ 16.5 V,
Tj = 150°C, Vces < 1200 V,
Non−Repetitive, < 2 us
800
V
Collector−Emitter Voltage
Vces
1200
V
Maximum Repetitive Revers Voltage
VRRM
1200
V
Each IGBT Collector Current
±Ic
±20
A
Each IGBT Collector Current (Peak)
±Icp
Under 1 ms Pulse Width
±40
A
Control Supply Voltage High−Side
Control Bias Voltage
VDD
VDD(UH, VH, WH), VDD(L) − VSS
−0.3 to 20
V
VBS
VB(U) − VS(U), VB(V) − VS(V),
VB(W) − VS(W)
−0.3 to 20
V
Input Signal Voltage
VIN
HIN(U), HIN(V), HIN(W), LIN(U), LIN(V),
LIN(W) − VSS
−0.3 to VDD
V
Fault Output Supply Voltage
VFO
VFO − VSS
−0.3 to VDD
V
Fault Output Current
IFO
Sink Current at VFO pin
2
mA
Current Sensing Input Voltage
VCIN
CIN − VSS
−0.3 to VDD
V
Corrector Dissipation
Pc
Per One Chip
125
W
Operating Junction Temperature
Ti
−40 to +150
°C
Storage Temperature
Tstg
−40 to +125
°C
Module Case Operation Temperature
Tc
−40 to +125
°C
Isolation Voltage
Viso
60 Hz, Sinusoidal, AC 1 minute, Connec-
tion Pins to Heat Sink Plate
2500
V rms
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe
Operating parameters.
2. This surge voltage developed by the switching operation due to the wiring inductance between P and NU, NV, NW terminal.
Table 3. THERMAL CHARACTERISTICS
Rating
Symbol
Conditions
Min
Typ
Max
Unit
Junction to Case Thermal
Resistance
Rth(j−c)Q
Inverter IGBT Part (per 1/6 Module)
1.0
°C/W
Rth(j−c)F
Inverter FRD Part (per 1/6 Module)
1.2
°C/W
3. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe
Operating parameters.
Table 4. RECOMMENDED OPERATING RANGES (Note 4) (continued)
Rating
Symbol
Conditions
Min
Typ
Max
Unit
Supply Voltage
VPN
P − NU, NV, NW
600
800
V
Gate Driver Supply Voltages
VDD
VDD(UH, VH, WH), VDD(L) − VSS
13.5
15
16.5
V
VBS
VB(U) − VS(U), VB(V) − VS(V),
VB(W) − VS(W)
13.0
15
18.5
V
Supply Voltage Variation
dVDD / dt
dVBS / dt
−1
1
V/ms
PWM Frequency
fPWM
1
20
kHz
Dead Time
DT
Turn−off to Turn−on (external)
3
ms



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