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SK10N65E Arkusz danych(PDF) 3 Page - SHIKUES Electronics

Numer części SK10N65E
Szczegółowy opis  650V N-Channel MOSFET
PDF  9 Pages
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Producent  SKTECHNOLGY [SHIKUES Electronics]
Strona internetowa  http://www.shikues.com
Logo SKTECHNOLGY - SHIKUES Electronics

SK10N65E Arkusz danych(HTML) 3 Page - SHIKUES Electronics

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Source-Drain Body Diode Characteristics
TJ=25
℃ unless otherwise specified
Symbol
Parameter
Min
Typ.
Max.
Unit
Test Conditions
ISD
Continuous Source Current
[4]
--
--
9
A
Integral PN-diode in
MOSFET
ISM
Pulsed Source Current
[4]
--
--
36
VSD
Diode Forward Voltage
--
--
1.5
V
IS=9A, VGS=0V
trr
Reverse recovery time
--
460
--
ns
VGS=0V ,IF=9A,
diF/dt=100A/μs
Qrr
Reverse recovery charge
--
1.5
--
uC
Note:
[1] TJ=+25
℃ to +150℃
[2] Repetitive rating; pulse width limited by maximum junction temperature.
[3] ISD= 9A di/dt < 100 A/μs, VDD < BVDSS, TJ=+150
℃.
[4] Pulse width≤380µs; duty cycle≤2%.
SK10N65E
3 of 9
REV.08



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