SK10N65E datasheet(1/9 Pages) SKTECHNOLGY

Numer części	SK10N65E

Szczegółowy opis	650V N-Channel MOSFET

PDF	9 Pages

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Producent	SKTECHNOLGY [SHIKUES Electronics]

Strona internetowa	http://www.shikues.com

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650V N-Channel MOSFET

General Features

Proprietary New Planar Technology

RDS(ON),typ.=0.85 Ω@VGS=10V

Low Gate Charge Minimize Switching Loss

Fast Recovery Body Diode

Applications

Adaptor

TV Main Power

SMPS Power Supply

LCD Panel Power

Absolute Maximum Ratings

TC=25

℃ unless otherwise specified

Symbol

Parameter

Unit

VDSS

Drain-to-Source Voltage

[1]

650

V

VGSS

Gate-to-Source Voltage

±30

ID

Continuous Drain Current

9

A

ID @ Tc =100

℃

Continuous Drain Current @ Tc=100

℃

Figure 3

IDM

Pulsed Drain Current at VGS=10V

[2]

Figure 6

EAS

Single Pulse Avalanche Energy

450

mJ

dv/dt

Peak Diode Recovery dv/dt

[3]

5.0

V/ns

PD

Power Dissipation

120

W

Derating Factor above 25

℃

0.96

W/

℃

TL

TPAK

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10

seconds, Package Body for 10 seconds

300

260

℃

TJ& TSTG

Operating and Storage Temperature Range

-55 to 150

Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device.

Thermal Characteristics

Symbol

Parameter

Unit

RθJC

Thermal Resistance, Junction-to-Case

1.04

℃/W

RθJA

Thermal Resistance, Junction-to-Ambient

75

BVDSS

RDS(ON),typ.

ID

650V

0.85Ω

9A

Package No to Scale

SK10N65E

TO-252

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SK10N65E

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