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LM1012 Arkusz danych(PDF) 2 Page - Shanghai Leiditech Electronic Technology Co., Ltd

Numer części LM1012
Szczegółowy opis  N-Channel Enhancement Mode Power MOSFET
PDF  4 Pages
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Producent  LEIDITECH [Shanghai Leiditech Electronic Technology Co., Ltd]
Strona internetowa  http://www.leiditech.com
Logo LEIDITECH - Shanghai Leiditech Electronic Technology Co., Ltd

LM1012 Arkusz danych(HTML) 2 Page - Shanghai Leiditech Electronic Technology Co., Ltd

  LM1012 Datasheet HTML 1Page - Shanghai Leiditech Electronic Technology Co., Ltd LM1012 Datasheet HTML 2Page - Shanghai Leiditech Electronic Technology Co., Ltd LM1012 Datasheet HTML 3Page - Shanghai Leiditech Electronic Technology Co., Ltd LM1012 Datasheet HTML 4Page - Shanghai Leiditech Electronic Technology Co., Ltd  
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■ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
Static Characteristics
Drain-source breakdown voltage
V(BR)DSS
VGS= 0V, ID=250
μA
20
V
Zero gate voltage drain current
IDSS
VDS=16V,VGS=0V
1
μA
Gate-body leakage current
IGSS1
VGS= ±4.5V, VDS=0V
±1
μA
Gate threshold voltage
VGS(th)
VDS= VGS, ID=250
μA
0.45
0.75
1.2
V
Drain-source on-resistance
RDS(ON)
VGS= 4.5V, ID=500mA
190
380
m
Ω
VGS= 2.5V, ID=400mA
260
450
Dynamic characteristics B
Input Capacitance
Ciss
VDS=16V,VGS=0V,f=1MHZ
60
pF
Output Capacitance
Coss
12
Reverse Transfer Capacitance
Crss
8
Switching Characteristics B
Turn-on delay time
td(on)
VGS=4.5V,VDD=10V,RG=10
Ω,ID=50
0mA
6.7
ns
Turn-on rise time
tr
4.8
Turn-off delay time
td(off)
17.3
Turn-off fall time
tf
7.4
Source-Drain Diode characteristics
Diode Forward voltage C
VDS
VGS=0V,IS=150mA
1.2
V
Notes:
A.
Repetitive Rating: Pulse width limited by maximum junction temperature.
B.
These parameters have no way to verify.
C.
Pulse Test: Pulse Width≤300us, Duty Cycle≤0.5%.
LM1012
Rev :
www.leiditech.com
01.06.2018
2/4



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