Zakładka z wyszukiwarką danych komponentów
  Polish  ▼
ALLDATASHEET.PL

X  

Preview PDF HTML

LM2305ML Arkusz danych(PDF) 2 Page - Shanghai Leiditech Electronic Technology Co., Ltd

Numer części LM2305ML
Szczegółowy opis  P-Channel Enhancement Mode MOSFET
PDF  5 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Producent  LEIDITECH [Shanghai Leiditech Electronic Technology Co., Ltd]
Strona internetowa  http://www.leiditech.com
Logo LEIDITECH - Shanghai Leiditech Electronic Technology Co., Ltd

LM2305ML Arkusz danych(HTML) 2 Page - Shanghai Leiditech Electronic Technology Co., Ltd

  LM2305ML Datasheet HTML 1Page - Shanghai Leiditech Electronic Technology Co., Ltd LM2305ML Datasheet HTML 2Page - Shanghai Leiditech Electronic Technology Co., Ltd LM2305ML Datasheet HTML 3Page - Shanghai Leiditech Electronic Technology Co., Ltd LM2305ML Datasheet HTML 4Page - Shanghai Leiditech Electronic Technology Co., Ltd LM2305ML Datasheet HTML 5Page - Shanghai Leiditech Electronic Technology Co., Ltd  
Zoom Inzoom in Zoom Outzoom out
 2 / 5 page
background image
Electrical Characteristics (TJ=25℃, unless otherwise noted)
Symbol
Parameter
Conditions
Min.
Typ.
Max. Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=-250uA
-20
---
---
V
△
BVDSS/△TJ
BVDSS Temperature Coefficient
Reference to 25℃ , ID=-1mA
---
-0.014
---
V/℃
RDS(ON)
Static Drain-Source On-Resistance2
VGS=-4.5V , ID=-4.9A
---
32
38
mΩ
VGS=-2.5V , ID=-3.4A
---
45
55
VGS=-1.8V , ID=-2A
---
65
85
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =-250uA
-0.4
---
-1.0
V
△
VGS(th)
VGS(th) Temperature Coefficient
---
3.95
---
mV/℃
IDSS
Drain-Source Leakage Current
VDS=-16V , VGS=0V , TJ=25℃
---
---
-1
uA
VDS=-16V , VGS=0V , TJ=55℃
---
---
-5
IGSS
Gate-Source Leakage Current
VGS=±12V , VDS=0V
---
---
±100
nA
gfs
Forward Transconductance
VDS=-5V , ID=-3A
---
12.8
---
S
Qg
Total Gate Charge (-4.5V)
VDS=-15V , VGS=-4.5V , ID=-3A
---
10.2
14.3
nC
Qgs
Gate-Source Charge
---
1.89
2.6
Qgd
Gate-Drain Charge
---
3.1
4.3
Td(on)
Turn-On Delay Time
VDD=-10V , VGS=-4.5V ,
RG=3.3 , ID=-3A
---
5.6
11.2
ns
Tr
Rise Time
---
40.8
73
Td(off)
Turn-Off Delay Time
---
33.6
67
Tf
Fall Time
---
18
36
Ciss
Input Capacitance
VDS=-15V , VGS=0V , f=1MHz
---
857
1200
pF
Coss
Output Capacitance
---
114
160
Crss
Reverse Transfer Capacitance
---
108
151
IS
Continuous Source Current1,4
VG=VD=0V , Force Current
---
--- -4.9
A
ISM
Pulsed Source Current2,4
---
--- -14
A
VSD
Diode Forward Voltage2
VGS=0V , IS=-1A , TJ=25℃
---
---
-1
V
trr
Reverse Recovery Time
IF=-3A , di/dt=100A/µs ,
TJ=25℃
--- 21.8
---
nS
Qrr
Reverse Recovery Charge
---
6.9
---
nC
Note :
1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2、The data tested by pulsed , pulse width △ 300us , duty cycle △ 2%
3、The power dissipation is limited by 150℃ junction temperature
4、
The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
LM2305ML
Rev 2.0 :
www.leiditech.com
12.01.2019
2/5



Html Pages

1 2 3 4 5


Arkusz danych Pobierz

Go To PDF Page


Link URL



Czy Alldatasheet okazała się pomocna?  [ DONATE ] 

O Alldatasheet   |   Reklama   |   Kontakt   |   Polityka prywatności   |   Link do karty katalogowej    |   Linki   |   Lista producentów
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com