LM2305ML datasheet(1/5 Pages) LEIDITECH

Numer części	LM2305ML

Szczegółowy opis	P-Channel Enhancement Mode MOSFET

PDF	5 Pages

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Producent	LEIDITECH [Shanghai Leiditech Electronic Technology Co., Ltd]

Strona internetowa	http://www.leiditech.com

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Description

The LM2305MLuses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 4.5V. This

device is suitable for use as a

Battery protection or in other Switching application.

General Features

VDS = -20V ID =-4.9A

RDS(ON) < 38mΩ @ VGS=-4.5V

Application

Battery protection

Load switch

Uninterruptible power supply

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

LM2305ML

SOT23-3L

A5SHB

.

3000

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

-20

V

VGS

Gate-Source Voltage

±12

V

ID@TA=25℃

Continuous Drain Current, VGS @ -4.5V1

-4.9

A

ID@TA=70℃

Continuous Drain Current, VGS @ -4.5V1

-3.9

A

IDM

Pulsed Drain Current2

-14

A

PD@TA=25℃

Total Power Dissipation3

1.31

W

PD@TA=70℃

Total Power Dissipation3

0.84

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Thermal Resistance Junction-Ambient 1

120

℃

/W

RθJA

Thermal Resistance Junction-Ambient 1 (t ≤10s)

95

℃

/W

P-Channel Enhancement Mode MOSFET

LM2305ML

Rev 2.0 :

www.leiditech.com

12.01.2019

1/5

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LM2305ML Arkusz danych(PDF) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd

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