LM4375 datasheet(2/3 Pages) LEIDITECH

2 / 3 page

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DEVICE

MARKING

MARKING 打標

LM4375 = C3

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ELECTRICAL

ELECTRICAL CHARACTERISTICS

CHARACTERISTICS

CHARACTERISTICS 電特性

(TA=25℃ unless otherwise noted 如無特殊說明，溫度爲 25℃)

Characteristic

特性參數

Symbol

符號

Min

最小值

Typ

典型值

Max

最大值

Unit

單位

Drain-Source Breakdown V oltage

漏極-源極擊穿電壓(ID =-250uA,VGS=0V)

BVDSS

-40

—

Gate Threshold V oltage

栅極開启電壓(ID =-250uA,VGS= VDS)

VGS(th)

-1.0

—

-3

Diode Forward V oltageDrop

内附二極管正向壓降

(ISD=-750mA,VGS=0V)

VSD

—

-1

Zero Gate V oltageDrain Current

零栅壓漏極電流(VGS=0V, VDS= -40V)

IDSS

—

-1

Gate Body Leakage

栅極漏電流(VGS=+20V, VDS=0V)

IGSS

—

+100

Static Drain-Source On-State Resistance

静态漏源導通電阻(ID=-5A,VGS=-10V)

(ID=-4A,VGS=-4.5V)

RDS(ON)

—

115

120

mΩ

Input Capacitance

輸入電容

(VGS=0V, VDS=-25V,f=1MHz)

CISS

—

573

—

Common Source Output Capacitance

共源輸出電容(VGS=0V, VDS=-25V,f=1MHz)

COSS

—

110

—

Turn-ON Time 开启時間

(VDS=-30V, ID=-270mA, RGEN=6Ω)

t(on)

—

Turn-OFF Time 关断時間

(VDS=-30V, ID=-270mA, RGEN=6Ω)

t(off)

—

120

1. FR-5=1.0×0.75×0.062in.

2. Alumina=0.4×0.3×0.024in.99.5%alumina.

Pulse Width<300μs; Duty Cycle<2.0%.

LM4375

Rev :

www.leiditech.com

01.06.2019

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