LM4375 datasheet(1/3 Pages) LEIDITECH

Numer części	LM4375

Szczegółowy opis	P-Channel Enhancement Mode Power MOSFET

PDF	3 Pages

Scroll/Zoom	100%

Producent	LEIDITECH [Shanghai Leiditech Electronic Technology Co., Ltd]

Strona internetowa	http://www.leiditech.com

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1 / 3 page

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MAXIMUM

MAXIMUM RATINGS

RATINGS

RATINGS最大額定值

Characteristic 特性參數

Symbol 符號

Max 最大值

Unit 單位

Drain-Source V oltage

漏極-源極電壓

BVDSS

-40

V

Gate- Source V oltage

栅極-源極電壓

VGS

+20

V

Drain Current (continuous)

漏極電流-連續

IDR

-3

A

Drain Current (pulsed)

漏極電流-脉冲

IDRM

-5

A

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THERMAL

THERMAL CHARACTERISTICS

CHARACTERISTICS

熱特性

Characteristic 特性

Symbol

符號

Max

最大值

Unit

單位

Total Device Dissipation 總耗散功率

TA

=25℃環境溫度爲 25℃

Derate above25℃ 超過 25℃遞減

PD

1000

3.8

mW

mW/℃

Thermal Resistance Junction to Ambient

熱阻

RΘJA

150

℃/W

Junction and Storage Temperature

結溫和儲存溫度

TJ,Tstg

150℃,-55to+150℃

Enhancement Mode Power MOSFET

P-Channel

LM4375

Rev :

www.leiditech.com

01.06.2019

1/3

Product Summary

● VDS

40V

● ID

3.0A

General Description

● Trench Power MV MOSFET technology

● Excellent package for heat dissipation

● High density cell design for low RDS(ON)

● MSL LEVEL1

Applications

● DC-DC Converters

● Power management functions

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LM4375 Arkusz danych(PDF) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd

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