Rev.1.01, Jan 27, 2006, page 1 of 10

2SC5998

Silicon NPN Epitaxial

High Frequency Medium Power Amplifier

REJ03G0169-0101

Rev.1.01

Jan 27, 2006

Features

• High Transition Frequency

• High gain and Excellent Efficiency

Power Added Efficiency (PAE) = 70% typ. at Pin = +16 dBm, f = 500 MHz

• High Collector to Emitter Voltage

• Ideal for up to 2 GHz applications.

e.g.FRS(Family Radio Service) Power Amplifier ,

GMRS (General Mobile Radio Service) Driver Amplifier

Outline

1

2

3

1. Collector

2. Base

3. Emitter

RENESAS Package code: PLSP0003ZB-A

(Package name: MPAK)

Note:

Marking is “YC-”.

Absolute Maximum Ratings

(Ta = 25°C)

Item

Symbol

Ratings

Unit

Collector to base voltage

13

V

Collector to emitter voltage

5

V

Emitter to base voltage

1.5

V

Collector current

500

mA

Collector power dissipation

Pc

700

note

mW

Junction temperature

Tj

150

°C

Storage temperature

Tstg

–55 to +150

°C

Note:

Value on PCB ( FR-4 : 25 x 30 x 1.0mm Double side )