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2SC5998 Arkusz danych(PDF) 3 Page - Renesas Technology Corp

Numer części 2SC5998
Szczegółowy opis  Silicon NPN Epitaxial High Frequency Medium Power Amplifier
PDF  11 Pages
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Producent  RENESAS [Renesas Technology Corp]
Strona internetowa  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SC5998 Arkusz danych(HTML) 3 Page - Renesas Technology Corp

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2SC5998
Rev.1.01, Jan 27, 2006, page 3 of 10
0
12
8
6
4
2
Collector Current IC (mA)
Transition Frequency vs.
Collector Current
1.5
1.0
0.5
01
2
3
5
IE = 0
f = 1 MHz
2.0
Collector to Base Voltage VCB (V)
Reverse Transfer Capacitance vs.
Collector to Base Voltage
3.0
1.0
01
2
3
5
IE = 0
f = 1 MHz
4.0
Collector to Base Voltage VCB (V)
Collector Output Capacitance vs.
Collector to Base Voltage
2.0
4
4
10
1
10
100
1000
40
30
20
10
0
0.1
1
10
VCE = 3.6 V
IC = 100 mA
Frequency f (GHz)
S21 Parameter, Maximum Available Gain,
Maximum Stable Gain vs. Frequency
f = 1 GHz
VCE = 3.6 V
MAG
MSG
|S21|2
0
5
10
15
20
25
Collector Current IC (mA)
Maximum Available Gain, Maximum Stable Gain
vs. Collector Current
1
10
100
1000
f = 0.5 GHz
1 GHz
2 GHz
3 GHz
VCE = 3.6 V
MAG
MSG



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