UP9T15GL-TN3-R datasheet(1/5 Pages) DOINGTER

Numer części	UP9T15GL-TN3-R

Szczegółowy opis	N-Channel MOSFET uses advanced trench technology

PDF	5 Pages

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Producent	DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]

Strona internetowa	http://www.doingter.cn/

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Description：

This N-Channel MOSFET uses advanced trench technology and

design to provide excellent RDS(on) with low gate charge.

It can be used in a wide variety of applications.

Features：

1) VDS=20V,ID=45A,RDS(ON)< 8mΩ@VGS=10V

2) Low gate charge.

3) Green device available.

4) Advanced high cell denity trench technology for ultra Iow RDS(ON).

5) Excellent package for good heat dissipation.

Absolute Maximum Ratings：(TA=25℃ unless otherwise noted)

Symbol

Parameter

Ratings

Units

VDS

Drain-Source Voltage

20

V

VGS

Gate-Source Voltage

±

12

V

ID

Continuous Drain Current

45

A

Continuous Drain Current-TC=100℃

28

IDM

Pulsed Drain Current

130

A

PD

Power Dissipation

45

W

EAS

Single pulse avalanche energy (Note5)

180

mJ

TJ, TSTG

Operating and Storage Junction Temperature Range

-55 to +175

℃

Thermal Characteristics：

Symbol

Parameter

Max

Units

RƟJC

Thermal Resistance,Junction to Case(Note2)

3.2

℃

/W

D

S

G

1

UP9T15GL-TN3-R

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