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UP9T15GL-TN3-R Arkusz danych(PDF) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

Numer części UP9T15GL-TN3-R
Szczegółowy opis  N-Channel MOSFET uses advanced trench technology
PDF  5 Pages
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Producent  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
Strona internetowa  http://www.doingter.cn/
Logo DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

UP9T15GL-TN3-R Arkusz danych(HTML) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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—
Electrical Characteristics：(TA=25℃ unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Sourtce Breakdown Voltage
VGS=0V,ID=250μA
20
---
---
V
IDSS
Zero Gate Voltage Drain Current
VGS=0V, VDS=20V
---
---
1
μ
A
IGSS
Gate-Source Leakage Current
VGS=±12V, VDS=0A
---
---
±
100
nA
On Characteristics
VGS(th)
GATE-Source Threshold Voltage
VGS=VDS, ID=250μA
0.5
0.7
1.2
V
RDS(ON)
Drain-Source On Resistance
VGS=10V,ID=20A
---
8
mΩ
VGS=4.5V,ID=20A
---
8.5
13
mΩ
VGS=2.5V,ID=20A
---
14
18
mΩ
GFS
Forward Transconductance
VDS=5V,ID=20A
10
---
---
S
Dynamic Characteristics(Note4)
Ciss
Input Capacitance
VDS=10V, VGS=0V, f=1MHz
---
1540
---
pF
Coss
Output Capacitance
---
210
---
Crss
Reverse Transfer Capacitance
---
200
---
Switching Characteristics(Note4)
td(on)
Turn-On Delay Time
VGS=10V,VDS=10V,
RL=0.5Ω,RGEN=3Ω
---
4.5
---
ns
tr
Rise Time
---
9.2
---
ns
td(off)
Turn-Off Delay Time
---
18.7
---
ns
tf
Fall Time
---
3.3
---
ns
Qg
Total Gate Charge
VGS=4.5V, VDS=10V,
ID=20A
---
23.5
---
nC
Qgs
Gate-Source Charge
---
2.8
---
nC
Qgd
Gate-Drain “Miller” Charge
---
5.75
---
nC
Drain-Source Diode Characteristics
2
6.3
UP9T15GL-TN3-R



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