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ADRF5019BCPZN-R7 Arkusz danych(PDF) 5 Page - Analog Devices

Numer części ADRF5019BCPZN-R7
Szczegółowy opis  Silicon, SPDT Switch, Nonreflective, 100 MHz to 13 GHz
PDF  12 Pages
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Producent  AD [Analog Devices]
Strona internetowa  http://www.analog.com
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ADRF5019BCPZN-R7 Arkusz danych(HTML) 5 Page - Analog Devices

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Data Sheet
ADRF5019
Rev. 0 | Page 5 of 12
ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameter
Rating
Positive Supply Voltage
−0.3 V to +3.7 V
Negative Supply Voltage
−2.8 V to +0.3 V
Digital Control Inputs
Voltage
−0.3 V to VDD + 0.3 V
Current
3 mA
RF Input Power, Dual Supply1 (VDD = 3.3 V,
VSS = −2.5 V, f = 2 GHz at TCASE = 85°C2)
Insertion Loss Path
37 dBm
Isolation Path
28 dBm
Hot Switching
30 dBm
RF Input Power, Dual Supply1 (VDD = 3.3 V,
VSS = 0 V, f = 2 GHz at TCASE = 85°C2)
Insertion Loss Path
28 dBm
Isolation Path
23 dBm
Hot Switching
23 dBm
RF Input Power Under Unbiased
Condition (VDD, VSS = 0 V)
23 dBm
Temperature
Junction, TJ
135°C
Storage Range
−65°C to +150°C
Reflow
260°C
Electrostatic Discharge (ESD) Sensitivity
Human Body Model (HBM)
2 kV (Class 2)
1 For power derating vs. frequency, see Figure 2 and Figure 3. Power derating
is applicable for insertion loss path, terminated path, and hot switching power
specifications.
2 For operation at 105°C, the power handling degrades from the TCASE = 85°C
specification by 3 dB.
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
THERMAL RESISTANCE
Thermal resistance is directly linked to printed circuit board
(PCB) design and operating environment. Careful attention to
PCB thermal design is required.
θJC is the junction to case bottom (channel to package bottom)
thermal resistance.
Table 3. Thermal Resistance
Package Type
θJC
Unit
CP-16-38
Through Path
106
°C/W
Terminated Path
100
°C/W
POWER DERATING CURVES
Figure 2. Power Derating vs. Frequency, Low Frequency Detail,
TCASE = 85°C
Figure 3. Power Derating vs. Frequency, High Frequency Detail,
TCASE = 85°C
ESD CAUTION
5
–25
–20
–15
–10
–5
0
0.01
0.1
1
10
100
1000
10000
FREQUENCY (MHz)
THROUGH
HOT SWITCHING
TERMINATED
5
–25
–20
–15
–10
–5
0
0
1347
8
2
4
6
9
10
11
12
13
FREQUENCY (GHz)
THROUGH
HOT SWITCHING
TERMINATED



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