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ADRF5132BCPZN-R7 Arkusz danych(PDF) 4 Page - Analog Devices

Numer części ADRF5132BCPZN-R7
Szczegółowy opis  High Power, 20 W Peak, Silicon SPDT, Reflective Switch, 0.7 GHz to 5.0 GHz
PDF  12 Pages
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Producent  AD [Analog Devices]
Strona internetowa  http://www.analog.com
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ADRF5132BCPZN-R7 Arkusz danych(HTML) 4 Page - Analog Devices

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ADRF5132
Data Sheet
Rev. B | Page 4 of 12
ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameter
Rating
Bias Voltage Range (VDD)
−0.3 V to +5.5 V
Control Voltage Range (VCTL)
−0.3 V to VDD
RF Input Power1
43 dBm
Channel Temperature
135°C
Storage Temperature Range
−65°C to +150°C
Operating Temperature Range
−40°C to +105°C
Peak Reflow Temperature (MSL3)
260°C
ESD Sensitivity
Human Body Model (HBM)
2 kV (Class 2)
Charged Device Model (CDM)
1.25 kV
1
For recommended operating conditions, see Table 1.
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
THERMAL RESISTANCE
Thermal performance is directly linked to printed circuit board
(PCB) design and operating environment. Careful attention to
PCB thermal design is required.
θJC is the junction to case bottom (channel to package bottom)
thermal resistance.
Table 3. Thermal Resistance
Package Type
θJC
Unit
CP-16-35
17
°C/W
ESD CAUTION



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