ACE11H1PB datasheet(3/7 Pages) ACE

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ACE11H1PB

Dual P-Channel Enhancement Mode Field Effect Transistor

VER 1.1

Electrical Characteristics TA=25 OC unless otherwise noted

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0V, ID= -

250μA

-20

Zero Gate Voltage Drain Current

IDSS

VDS = -20 V , VGS = 0V

-1

μA

Gate Threshold Voltage

VGS(th)

VGS = VDS , IDS= -

250μA

-0.5

-0.6

-1

Gate Leakage Current

IGSS

VGS= ±12V , VDS=0V

±100

Static Drain-Source On-Resistance

RDS(ON)

VGS = -4.5V , ID= -2.8A

mΩ

VGS = -2.5V , ID= -2A

115

VGS = -1.8V , ID= -2A

119

150

Forward Transconductance

gFS

VDS= -5V , ID= -2.5A

Diode Forward Voltage

VSD

ISD= -1.6A , VGS= 0V

-0.81

-1.0

Maximum Body-Diode Continuous

Current

-1.6

Switching

Total Gate Charge

VDS = -6V, ID = -2.8A

VGS = -4.5V

6.6

8.6

Gate-Source Charge

Qgs

0.3

0.4

Gate-Drain Charge

Qgd

1.3

1.7

Turn-On Delay Time

Td(on)

VDD= -6V, RL=6

ID= -1A, VGEN = -4.5V

= 6Ω

9.7

19.4

Turn-On Rise Time

3.6

7.1

Turn-Off Delay Time

td(off)

33.3

66.6

Turn-Off Fall Time

4.5

Dynamic

Input Capacitance

Ciss

VGS=0V,VDS= -6V

f= 1.0MHz

589

Output Capacitance

Coss

91.2

Reverse Transfer Capacitance

Crss

67.2

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