ACE11H1PB datasheet(1/7 Pages) ACE

Numer części	ACE11H1PB

Szczegółowy opis	Dual P-Channel Enhancement Mode Field Effect Transistor

PDF	7 Pages

Scroll/Zoom	100%

Producent	ACE [ACE Technology Co., LTD.]

Strona internetowa	http://www.ace-ele.com

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ACE11H1PB

Dual P-Channel Enhancement Mode Field Effect Transistor

VER 1.1

1

Description

The ACE11H1PB uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

This device is suitable for use as a load switch or in PWM applications.

Features



VDS (V) = -20V



ID (VGS = -4.5V)= -3A



RDS(ON)

<85mΩ @ V

GS= -4.5V



RDS(ON)

<115mΩ @ V

GS= -2.5V



RDS(ON)

<150mΩ @ V

GS= -1.8V



SOT23-6 Package

Absolute Maximum Ratings

Parameter

Symbol

Max

Unit

Drain-Source Voltage

VDSS

20

V

Gate-Source Voltage

VGSS

±12

V

Drain Current (Continuous)

TA=25

OC

ID

-3

A

TA=70

OC

-2.4

Drain Current (Pulse)

C

IDM

-13

Power Dissipation

B

TA=25

OC

PD

1.15

W

TA=70

OC

0.73

Operating and Storage Temperature Range

TJ,TSTG

-55 to 150

OC

A.

The value of RθJA is measured with the device mounted on 1in

2 FR-4 board with 2oz. Copper, in a still air

environment with TA =25°C. The value in any given application depends on the user's specific board design.

B.

The power dissipation PD is based on TJ(MAX)=150℃

, using≤10s junction-to-ambient thermal resistance.

C.

Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150℃ . Ratings are based on low

frequency and duty cycles to keep initial TJ=25°C.

D.

The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.

E.

The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.

F.

These curves are based on the junction-to-ambient thermal impedence which is measured with the device

mounted on 1in

2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of T

J(MAX)=150°C.

The SOA curve provides a single pulse rating.

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