Preliminary

PLL520-20

Low Phase Noise VCXO (for 100-200MHz Fundamental Crystals)

47745 Fremont Blvd., Fremont, California 94538 TEL (510) 492-0990 FAX (510) 492-0991 www.phaselink.com Rev 03/03/05 Page 2

ELECTRICAL SPECIFICATIONS

1. Absolute Maximum Ratings

PARAMETERS

SYMBOL

MIN.

MAX.

UNITS

Supply Voltage

4.6

V

Input Voltage, dc

V

Output Voltage, dc

V

Storage Temperature

-65

150

°C

Ambient Operating Temperature

0

70

°C

Junction Temperature

125

°C

Lead Temperature (soldering, 10s)

260

°C

Input Static Discharge Voltage Protection

2

kV

Exposure of the device under conditions beyond the limits specified by Maximum Ratings for extended periods may cause permanent damage to the

device and affect product reliability. These conditions represent a stress rating only, and functional operations of the device at these or any other

conditions above the operational limits noted in this specification is not implied.

2. Crystal Specifications

PARAMETERS

SYMBOL

CONDITIONS

MIN.

TYP.

MAX.

UNITS

Crystal Resonator Frequency

Parallel Fundamental Mode

120

200

MHz

Crystal Loading Rating

Die at VCON = 1.65V

4

pF

Interelectrode Capacitance

3.5

pF

Crystal Pullability

AT cut

250

-

Recommended ESR

AT cut

30

Ω

3. Voltage Control Crystal Oscillator

PARAMETERS

SYMBOL

CONDITIONS

MIN.

TYP.

MAX.

UNITS

VCXO Stabilization Time *

From power valid

10

ms

VCXO Tuning Range

180*

ppm

CLK output pullability

0V

≤ VCON ≤ 3.3V

at room temperature

±100*

ppm

On-chip Varicaps control range

VCON = 0 to 3.3V

4 – 18*

pF

Linearity

4*

5*

%

VCXO Tuning Characteristic

65

ppm/V

VCON input impedance

60

k

Ω

VCON modulation BW

0V

≤ VCON ≤ 3.3V, -3dB

25

kHz

Note: Parameters denoted with an asterisk (*) represent nominal characterization data and are not production tested to any specific limits.