ACE6465M datasheet(3/7 Pages) ACE

3 / 7 page

ACE6465M

P-Channel 60-V (D-S) MOSFET

VER 1.1

Electrical Characteristics

TA=25℃, unles s otherwise specified.

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Static

Gate-Source Threshold

Voltage

VGS(th)

VDS = VGS, ID = -250 uA

-1

Gate-Body Leakage

IGSS

VDS= 0 V, VGS= ±20 V

±100

Zero Gate Voltage Drain

Current

IDSS

VDS =-48V, VGS = 0 V

-1

VDS = -48 V, VGS = 0 V, TJ = 55°C

-10

On-State Drain Current

ID(on)

VDS = -5 V, VGS = -10 V

-25

Drain-Source On-Resistance

rDS(on)

VGS = -10 V, ID = -9 A

9.8

mΩ

VGS = -4.5 V, ID = -8 A

11.2

Forward Transconductance

gfs

VDS = -15 V, ID = -9 A

Diode Forward Voltage

VSD

IS= -3.6 A, VGS = 0 V

-0.72

Dynamic

Total Gate Charge

DS= -30 V, VGS = -4.5 V, ID= -9 A

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

Turn-On Delay Time

td(on)

DS= -30 V, RL= 3.3 Ω, ID = -9 A,

GEN= -10 V, RGEN= 6 Ω

Rise Time

Turn-Off Delay Time

td(off)

255

Fall Time

Input Capacitance

Ciss

DS = -15 V, VGS = 0 V, f = 1 MHz

5960

Output Capacitance

Coss

540

Reverse Transfer Capacitance

Crss

370

Note :

Pulse test: PW <= 300us duty cycle <= 2%.

Guaranteed by design, not subject to production testing

ACE6465M Arkusz danych(PDF) 3 Page - ACE Technology Co., LTD.

ACE6465M Arkusz danych(HTML) 3 Page - ACE Technology Co., LTD.

Html Pages

1 2 3 4 5 6 7

Arkusz danych Pobierz

Link URL