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ACE6465M Arkusz danych(PDF) 1 Page - ACE Technology Co., LTD. |
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ACE6465M Arkusz danych(HTML) 1 Page - ACE Technology Co., LTD. |
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1 / 7 page ![]() ACE6465M P-Channel 60-V (D-S) MOSFET VER 1.1 1 Features • Low r DS(on) trench technology • Low thermal impedance • Fast switching speed Applications Load Switches DC/DC Conversion Motor Drives Absolute Maximum Ratings Parameter Symbol Limit Units Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS ±20 V Continuous Drain Current a TA=25℃ ID -19 A TA=70℃ -15 Pulsed Drain Current b IDM -70 A Continuous Source Current (Diode Conduction) a IS -7.1 A Power Dissipation a TA=25℃ PD 5 W TA=70℃ 3.2 Operating temperature / storage temperature TJ/TSTG -55~150 ℃ THERMAL RESISTANCE RATINGS Parameter Symbol Maximum Units Maximum Junction-to-Ambient a t <= 10 sec RθJA 25 °C/W Steady State 65 Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature PRODUCT SUMMARY VDS (V) rDS (on) (mΩ) ID(A) -60 9.8@ VGS = -10V -19 11.2 @ VGS = -4.5V -17 |
Podobny numer części - ACE6465M |
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