QPD1014 datasheet(1/21 Pages) QORVO

Numer części	QPD1014

Szczegółowy opis	15W, 50V, 30 ??1200 MHz, GaN RF Input-Matched Transistor

PDF	21 Pages

Scroll/Zoom	100%

Producent	QORVO [Qorvo, Inc]

Strona internetowa	https://www.qorvo.com/

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QPD1014

15W, 50V, 30

– 1200 MHz, GaN RF Input-Matched Transistor

Rev. A

- 1 of 21 -

Disclaimer: Subject to change without notice

www.qorvo.com

Product Features

 Frequency: 30 to 1200 MHz

 Output Power (P3dB): 12.5 W1

 Linear Gain: 18.4 dB1

 Typical PAE3dB: 69.5%1

 Operating Voltage: 50 V

 Low thermal resistance package

 CW and Pulse capable

 6 x 5 mm package

Note 1: @ 1 GHz (Loadpull)

8 Pin DFN (6

x 5 x 0.85 mm)

General Description

The QPD1014 is a 15W (P3dB),

50Ω-input matched

discrete GaN on SiC HEMT which operates from 30MHz to

1200MHz on a 50V supply rail. The integrated input

matching network enables wideband gain and power

performance, while the output can be matched on board to

optimize power and efficiency for any region within the

band. It is ideally suited for basestation, radar and

communications applications and can support both CW and

pulsed mode of operations.

The device is housed in a 6 x 5 mm surface mount DFN

package.

Functional Block Diagram

Applications

 Basestation

 Active Antenna

 Military radar

 Civilian radar

 Land mobile and military radio communications

 Jammers

Ordering info

Part No.

ECCN Description

QPD1014

EAR99

30

–1200 MHz RF Transistor

QPD1014S2

EAR99

30

–1200MHz RF Transistor Sample

QPD1014EVB01

EAR99

30

–1000MHz EVB

Podobny numer części - QPD1014

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TriQuint Semiconductor	QPD1014	2Mb / 21P	GaN RF Input-Matched Transistor
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