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QPD1014 Arkusz danych(PDF) 3 Page - Qorvo, Inc

Numer części QPD1014
Szczegółowy opis  15W, 50V, 30 ??1200 MHz, GaN RF Input-Matched Transistor
PDF  21 Pages
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Producent  QORVO [Qorvo, Inc]
Strona internetowa  https://www.qorvo.com/
Logo QORVO - Qorvo, Inc

QPD1014 Arkusz danych(HTML) 3 Page - Qorvo, Inc

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QPD1014
15W, 50V, 30
– 1200 MHz, GaN RF Input-Matched Transistor
Rev. A
- 3 of 21 -
Disclaimer: Subject to change without notice
© 2016 Qorvo
www.qorvo.com
RF Characterization
– Load Pull Performance – Efficiency Tuned1, 2
Parameters
Typical Values
Unit
Frequency
600
800
1000
1200
MHz
Linear Gain, GLIN
21.8
22.6
23.0
21.2
dB
Output Power at 3dB compression
point, P3dB
39.0
39.7
41.2
40.7
dBm
Power-Added-Efficiency at 3dB
compression point, PAE3dB
79.2
70.7
72.6
70.4
%
Gain at 3dB compression point, G3dB
18.8
19.6
20.0
18.2
dB
Notes:
1.
Test conditions unless otherwise noted: VD = +50
 V, IDQ = 25 mA, Temp = +25 °C.
2.
See page 16 for load pull and source pull reference planes.
RF Characterization
– Load Pull Performance – Power Tuned1, 2
Parameters
Typical Values
Unit
Frequency, F
600
800
1000
1200
MHz
Linear Gain, GLIN
20.1
21.0
21.5
20.8
dB
Output Power at 3dB compression
point, P3dB
41.9
42.4
42.7
42.3
dBm
Power-Added-Efficiency at 3dB
compression point, PAE3dB
65.0
62.0
63.0
60.0
%
Gain at 3dB compression point
17.1
18.0
18.5
17.8
dB
Notes:
1.
Test conditions unless otherwise noted: VD = +50
 V, IDQ = 25 mA, Temp = +25 °C.
2.
See page 16 for load pull and source pull reference planes.
RF Characterization
– 30 – 1000 MHz EVB Performance At 1000 MHz1
Parameter
Min
Typ
Max
Units
Linear Gain, GLIN
–
21.1
–
 dB
Output Power at 3dB compression
point, P3dB
–
40.8
–
dBm
Drain Efficiency at 3dB compression
point, DEFF3dB
–
67.4
–
%
Gain at 3dB compression point, G3dB
–
18.1
–
dB
Notes:
1.
Test conditions unless otherwise noted: VD = +50
 V, IDQ = 25 mA, Temp = +25 °C.
RF Characterization
– Mismatch Ruggedness at 1000 MHz1
Symbol Parameter
dB Compression
Typical
VSWR
Impedance Mismatch Ruggedness
3
 10:1
Notes:
1.
Test conditions unless otherwise noted: VD
= +50 V, IDQ = 25 mA, Temp = +25 °C.



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