FSUSB242UCX−Z002

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6

Table 3. ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Min

Max

Unit

−0.5

12.0

V

DC Input voltage tolerance for HSD±, to GND

−18

20

V

DC Input voltage tolerance for HSD1±, HSD2± to GND

−1.2

6

V

DC Input Voltage (SEL)

−0.5

6

V

DC HSD Switch Current

100

mA

DC Input Diode Current

−50

mA

Storage Temperature Range

−65

+150

°C

Maximum Junction Temperature

+150

°C

Lead Temperature (Soldering, 10 seconds)

+260

°C

ESD

Human Body Model, JEDEC

JESD22−A114

Power to GND

2

kV

Internal Pin to GND (HSD1±, HSD2±)

2

External Pin to GND (HSD±)

14

Charged Device Model, JEDEC

LESD22−C101

All Pins

1

IEC 61000−4−5 Surge Protection

HSD±, to GND

±25

V

+12

V

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

Table 4. RECOMMENDED OPERATING CONDITIONS

Symbol

Parameter

Min

Typ

Max

Unit

Supply Voltage

2.7

4.2

5.5

V

HSD1 Switch I/O Signal Swing Voltage (Note 1)

−0.5

3.6

V

HSD2 Switch I/O Signal Swing Voltage (Note 1)

−0.5

4.5

V

Maximum HSD Switch Continuous Current

75

mA

Control Input Voltage (SEL)

−0.5

V

Operating Temperature

−40

+85

°C

Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond

the Recommended Operating Ranges limits may affect device reliability.

1. The switch swing voltage is based on the OVP trip level, and when OVP triggers the switch will be disabled to protect the host and no longer

in the standard operating condition, once over voltage is removed the device will automatically recover back to normal condition.

Table 5. DC ELECTRICAL CHARACTERISTICS

otherwise specified.)

Symbol

Characteristic

Conditions

Unit

Min

Typ

Max

BASIC OPERATION DEVICE

Quiescent Supply Current

2.7 to 5.5

10

mA

Power−Off Leakage Current

0

−3

3

mA

Control Input Leakage

2.7 to 5.5

−2

4

mA

Off State Leakage

2.7 to 5.5

HSD± ≥ 0 V, HSD1±,

HSD2± ≤ 3.6 V

−3

5

mA