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STGAP2SCM Arkusz danych(PDF) 13 Page - STMicroelectronics |
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STGAP2SCM Arkusz danych(HTML) 13 Page - STMicroelectronics |
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13 / 23 page ![]() 7 Layout 7.1 Layout guidelines and considerations Inorder to optimize the PCB layout, following considerations should be taken into account: • SMT ceramic capacitors (or different types of low-ESR and low-ESL capacitors) must be placed close to each supply rail pins. A 100 nF capacitor must be placed between VDD and GND and between VH and GNDISO, as close as possible to device pins, in order to filter high-frequency noise and spikes. In order to provide local storage for pulsed current a second capacitor with value in the range between 1 µF and 10 µF should also be placed close to the supply pins. • As a good practice it is suggested to add filtering capacitors close to logic inputs of the device (IN+, IN-), in particular for fast switching or noisy applications. • The power transistors must be placed as close as possible to the gate driver, so to minimize the gate loop area and inductance that might bring to noise or ringing. • To avoid degradation of the isolation between the primary and secondary side of the driver, there should not be any trace or conductive area below the driver. • If the system has multiple layers, it is recommended to connect the VH and GNDISO pins to internal ground or power planes through multiple vias of adequate size. These vias should be located close to the IC pins to maximize thermal conductivity. 7.2 Layout example Anexample of STGAP2SC Half-Bridge PCB layout with main signals highlighted by different colors is shown in Figure 11 . It is recommended to follow this example for proper positioning and connection of filtering capacitors. Figure 11. Layer traces and copper Q1 Q2 U1 U2 CVH1 CVH2 CVDD1 ROFF RON G1 D1 S1 CIN RIN CVH1 CVH2 CVDD1 ROFF RON G2 D2 S2 CIN RIN TOP BOTTOM STGAP2S Layout DS12541 - Rev 3 page 13/23 |
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