STM32L082KB datasheet(83/132 Pages) STMICROELECTRONICS

83 / 132 page

DS10688 Rev 7

83/132

STM32L082xx

Electrical characteristics

109

6.3.11

Electrical sensitivity characteristics

Based on three different tests (ESD, LU) using specific measurement methods, the device is

stressed in order to determine its performance in terms of electrical sensitivity.

Electrostatic discharge (ESD)

Electrostatic discharges (a positive then a negative pulse separated by 1 second) are

applied to the pins of each sample according to each pin combination. The sample size

depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test

conforms to the ANSI/JEDEC standard.

Static latch-up

Two complementary static tests are required on six parts to assess the latch-up

performance:

•

A supply overvoltage is applied to each power supply pin

•

A current injection is applied to each input, output and configurable I/O pin

These tests are compliant with EIA/JESD 78A IC latch-up standard.

Table 54. ESD absolute maximum ratings

Symbol

Ratings

Conditions

Class

Maximum

value(1)

1. Guaranteed by characterization results.

Unit

VESD(HBM)

Electrostatic discharge

voltage (human body model)

TA = +25 °C,

conforming to

ANSI/JEDEC JS-001

22000

VESD(CDM)

Electrostatic discharge

voltage (charge device

model)

TA = +25 °C,

conforming to

ANSI/ESD STM5.3.1.

500

Table 55. Electrical sensitivities

Symbol

Parameter

Conditions

Class

Static latch-up class

TA = +125 °C conforming to JESD78A

II level A

STM32L082KB Arkusz danych(PDF) 83 Page - STMicroelectronics

STM32L082KB Arkusz danych(HTML) 83 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 ...More

Arkusz danych Pobierz

Link URL