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CMBD4150 Arkusz danych(PDF) 2 Page - Continental Device India Limited

Numer części CMBD4150
Szczegółowy opis  SILICON PLANAR EPITAXIAL HIGH SPEED DIODE
PDF  3 Pages
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Producent  CDIL [Continental Device India Limited]
Strona internetowa  http://www.cdilsemi.com
Logo CDIL - Continental Device India Limited

CMBD4150 Arkusz danych(HTML) 2 Page - Continental Device India Limited

  CMBD4150 Datasheet HTML 1Page - Continental Device India Limited CMBD4150 Datasheet HTML 2Page - Continental Device India Limited CMBD4150 Datasheet HTML 3Page - Continental Device India Limited  
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Continental Device India Limited
Data Sheet
Page 2 of 3
CMBD4150
THERMAL RESISTANCE
From junction to ambient
Rth j–a
500 K/W
CHARACTERISTICS (at TA = 25 °C, unless otherwise specified)
Continuous reverse voltage
VR
max.
50 V
Repetitive peak reverse voltage
VRRM
max.
75 V
Forward current (d.c.)
IF
max.
300 mA
Repetitive peak forward current
IFRM
max.
600 mA
Non–repetitive peak forward current
T = 1
µsec
IFSM
max.
4 A
T = 1 sec
IFSM
max.
0.5 A
Diode capacitance
VR = 0; f = 1 MHz
CD
max.
2.5 pF
Forward voltage
min.
540 mV
IF = 1 mA
VF
max.
620 mV
min.
660 mV
IF = 10 mA
VF
max.
740 mV
min.
760 mV
IF = 50 mA
VF
max.
860 mV
min.
820 mV
IF = 100 mA
VF
max.
920 mV
min.
870 mV
IF = 200 mA
VF
max.
1 V
Reverse breakdown voltage
IR = 100 mAVBR
min
75 V
Reverse voltage leakage current
VR = 50 V
IR
max.
100 nA
Reverse current
VR = 50 V; Tj = 150 °C
IR
max.
100
µA
Forward recovery voltage
when switched to IF = 10 mA; tP = 20 nsec.
VFR
max.
1.75 V
Reverse recovery time
IF = IR = 10 – 200 mAdc, RL = 100 Ω
trr
max.
4 ns
IF = IR = 200 – 400 mAdc, RL = 100 Ω
trr
max.
6 ns



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