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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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CMBD4150 Arkusz danych(PDF) 1 Page - Continental Device India Limited |
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CMBD4150 Arkusz danych(HTML) 1 Page - Continental Device India Limited |
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1 / 3 page  Continental Device India Limited Data Sheet Page 1 of 3 SILICON PLANAR EPITAXIAL HIGH SPEED DIODE Marking CMBD4150 = D18 ABSOLUTE MAXIMUM RATINGS Continuous reverse voltage VR 50 V Repetitive peak reverse voltage VRRM max. 75 V Repetitive peak forward current IFRM max. 600 mA Junction temperature Tj max. 150 ° C Peak forward surge current T = 1 µsec. IFSM max. 4 A T = 1 sec. IFSM max. 0.5 A Reverse recovery time when switched from IF = 400 mA to IR = 400 mA; RL = 100 Ω measured at IR = 4 mA Trr max. 6 ns RATINGS (at TA = 25 °C, unless otherwise specified) Storage Temperature Tstg –55 to +150 ° C CMBD4150 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = ANODE 2= NC 3 = CATHODE 2 3 1 SOT-23 Formed SMD Package Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company |
Podobny numer części - CMBD4150 |
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Podobny opis - CMBD4150 |
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