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SPD09P06PLG Arkusz danych(PDF) 6 Page - Infineon Technologies AG

Numer części SPD09P06PLG
Szczegółowy opis  SIPMOS Power-Transistor
PDF  9 Pages
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Producent  INFINEON [Infineon Technologies AG]
Strona internetowa  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

SPD09P06PLG Arkusz danych(HTML) 6 Page - Infineon Technologies AG

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20
11-10-12
Rev 2.6
Page 6
SPD09P06PL
G
9 Drain-source on-state resistance
RDS(on) = f (Tj)
parameter : ID = -6.8 A, VGS = -10 V
-60
-20
20
60
100
140 °C
200
Tj
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.5
0.55
0.6

0.75
SPD09P06PL
typ
98%
10 Gate threshold voltage
VGS(th) = f (Tj)
parameter: VGS = VDS, ID = -250 µA
-60
-20
20
60
100
°C
180
Tj
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
V
2.4
typ.
98 %
2 %
11 Typ. capacitances
C = f (VDS)
parameter: VGS=0V, f=1 MHz
0
-5
-10
-15
-20
V
-30
VDS
1
10
2
10
3
10
pF
Ciss
Coss
Crss
12 Forward character. of reverse diode
IF = f (VSD)
parameter: Tj , tp = 80 µs
0
-0.4
-0.8
-1.2
-1.6
-2
-2.4
V
-3
VSD
-1
-10
0
-10
1
-10
2
-10
A
SPD09P06PL
T
j = 25 °C typ
T
j = 25 °C (98%)
T
j = 175 °C typ
T
j = 175 °C (98%)



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