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BAS516 Arkusz danych(PDF) 2 Page - NXP Semiconductors

Numer części BAS516
Szczegółowy opis  High-speed diode
PDF  12 Pages
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Producent  PHILIPS [NXP Semiconductors]
Strona internetowa  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BAS516 Arkusz danych(HTML) 2 Page - NXP Semiconductors

  BAS516 Datasheet HTML 1Page - NXP Semiconductors BAS516 Datasheet HTML 2Page - NXP Semiconductors BAS516 Datasheet HTML 3Page - NXP Semiconductors BAS516 Datasheet HTML 4Page - NXP Semiconductors BAS516 Datasheet HTML 5Page - NXP Semiconductors BAS516 Datasheet HTML 6Page - NXP Semiconductors BAS516 Datasheet HTML 7Page - NXP Semiconductors BAS516 Datasheet HTML 8Page - NXP Semiconductors BAS516 Datasheet HTML 9Page - NXP Semiconductors Next Button
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1998 Aug 31
2
Philips Semiconductors
Product specification
High-speed diode
BAS516
FEATURES
• Ultra small plastic SMD package
• High switching speed: max. 4 ns
• Continuous reverse voltage: max. 75 V
• Repetitive peak reverse voltage: max. 85 V
• Repetitive peak forward current: max. 500 mA.
APPLICATIONS
• High-speed switching in e.g. surface mounted circuits.
DESCRIPTION
The BAS516 is a high-speed switching diode fabricated in
planar technology, and encapsulated in the SOD523
(SC79) SMD plastic package.
PINNING
PIN
DESCRIPTION
1
cathode
2
anode
Fig.1 Simplified outline (SOD523) and symbol.
Marking code: 6.
handbook, halfpage12


Top view
MAM408
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Ts is the temperature at the soldering point of the cathode tab.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
85
V
VR
continuous reverse voltage
75
V
IF
continuous forward current
Ts =90 °C; note 1; see Fig.2
250
mA
IFRM
repetitive peak forward current
500
mA
IFSM
non-repetitive peak forward current
square wave; Tj =25 °C prior to
surge; see Fig.4
t=1
µs
4A
t=1ms
1A
t=1s
0.5
A
Ptot
total power dissipation
Ts =90 °C; note 1
500
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
150
°C



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