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BAS516 Arkusz danych(PDF) 3 Page - NXP Semiconductors

Numer części BAS516
Szczegółowy opis  High-speed diode
PDF  12 Pages
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Producent  PHILIPS [NXP Semiconductors]
Strona internetowa  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BAS516 Arkusz danych(HTML) 3 Page - NXP Semiconductors

  BAS516 Datasheet HTML 1Page - NXP Semiconductors BAS516 Datasheet HTML 2Page - NXP Semiconductors BAS516 Datasheet HTML 3Page - NXP Semiconductors BAS516 Datasheet HTML 4Page - NXP Semiconductors BAS516 Datasheet HTML 5Page - NXP Semiconductors BAS516 Datasheet HTML 6Page - NXP Semiconductors BAS516 Datasheet HTML 7Page - NXP Semiconductors BAS516 Datasheet HTML 8Page - NXP Semiconductors BAS516 Datasheet HTML 9Page - NXP Semiconductors Next Button
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1998 Aug 31
3
Philips Semiconductors
Product specification
High-speed diode
BAS516
ELECTRICAL CHARACTERISTICS
Tj =25 °C unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1. Soldering point of the cathode tab.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
VF
forward voltage
see Fig.3
IF = 1 mA
715
mV
IF = 10 mA
855
mV
IF =50mA
1
V
IF = 150 mA
1.25
V
IR
reverse current
see Fig.5
VR = 25 V
30
nA
VR =75V
1
µA
VR = 25 V; Tj = 150 °C30
µA
VR = 75 V; Tj = 150 °C;
50
µA
Cd
diode capacitance
f = 1 MHz; VR = 0; see Fig.6
1
pF
trr
reverse recovery time
when switched from IF = 10 mA to IR = 10 mA;
RL = 100 Ω; measured at IR = 1 mA; see Fig.7
4ns
Vfr
forward recovery voltage
when switched from IF = 10 mA; tr = 20 ns; see Fig.8
1.75
V
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-s
thermal resistance from junction to soldering point
note 1
120
K/W



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