1999 Apr 08

2

Philips Semiconductors

Product specification

PNP medium power transistors

BCP51; BCP52; BCP53

FEATURES

• High current (max. 1 A)

• Low voltage (max. 80 V)

• Medium power (max. 1.3 W).

APPLICATIONS

• Audio, telephony and automotive applications

• Thick and thin-film circuits.

DESCRIPTION

PNP medium power transistor in a SOT223 plastic

package. NPN complements: BCP54, BCP55 and BCP56.

PINNING

PIN

DESCRIPTION

1

base

2, 4

collector

3

emitter

Fig.1 Simplified outline (SOT223) and symbol.

handbook, halfpage

4

12

3

MAM288

Top view

3

2, 4

1

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

For other mounting conditions, see

“Thermal considerations for SOT223 in the General Part of associated

Handbook”.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

BCP51

−−45

V

BCP52

−−60

V

BCP53

−−100

V

collector-emitter voltage

open base

BCP51

−−45

V

BCP52

−−60

V

BCP53

−−80

V

emitter-base voltage

open collector

−−5V

collector current (DC)

−−1A

peak collector current

−−1.5

A

peak base current

−−0.2

A

total power dissipation

−

1.3

W

storage temperature

−65

+150

°C

junction temperature

−

150

°C

operating ambient temperature

−65

+150

°C